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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT40M70JVR Microchip Technology

APT40M70JVR

MOSFET N-CH 400V 53A SOT227

Microchip Technology

40 -
Datasheet POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 400 V 53A (Tc) 10V 70mOhm @ 26.5A, 10V 4V @ 2.5mA 495 nC @ 10 V ±30V 8890 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
APT10045JLL Microchip Technology

APT10045JLL

MOSFET N-CH 1000V 21A ISOTOP

Microchip Technology

20 -
Datasheet POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) 10V 450mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V ±30V 4350 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
MSC100SM70JCU2 Microchip Technology

MSC100SM70JCU2

SICFET N-CH 700V 124A SOT227

Microchip Technology

8 -
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 124A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA 215 nC @ 20 V +25V, -10V 4500 pF @ 700 V - 365W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
APT60M60JFLL Microchip Technology

APT60M60JFLL

MOSFET N-CH 600V 70A ISOTOP

Microchip Technology

10 -
Datasheet POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 60mOhm @ 35A, 10V 5V @ 5mA 289 nC @ 10 V ±30V 12630 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT30F50B Microchip Technology

APT30F50B

MOSFET N-CH 500V 30A TO247

Microchip Technology

95 -
Datasheet POWER MOS 8™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 190mOhm @ 14A, 10V 5V @ 1mA 115 nC @ 10 V ±30V 4525 pF @ 25 V - 415W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
APT9M100S Microchip Technology

APT9M100S

MOSFET N-CH 1000V 9A D3PAK

Microchip Technology

47 -
Datasheet POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 9A (Tc) 10V 1.4Ohm @ 5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2605 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
MSC080SMA120B4 Microchip Technology

MSC080SMA120B4

SICFET N-CH 1200V 37A TO247-4

Microchip Technology

94 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
MSC060SMA070B Microchip Technology

MSC060SMA070B

SICFET N-CH 700V 39A TO247-3

Microchip Technology

79 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 39A (Tc) 20V 75mOhm @ 20A, 20V 2.4V @ 1mA 56 nC @ 20 V +23V, -10V 1175 pF @ 700 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
MSC060SMA070S Microchip Technology

MSC060SMA070S

SICFET N-CH 700V 37A D3PAK

Microchip Technology

92 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 37A (Tc) 20V 75mOhm @ 20A, 20V 2.4V @ 1mA (Typ) 56 nC @ 20 V +23V, -10V 1175 pF @ 700 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT1204R7BFLLG Microchip Technology

APT1204R7BFLLG

MOSFET N-CH 1200V 3.5A TO247

Microchip Technology

43 -
Datasheet POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 3.5A (Tc) 10V 4.7Ohm @ 1.75A, 10V 5V @ 1mA 31 nC @ 10 V ±30V 715 pF @ 25 V - 135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.