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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT50M75JLLU2 Microchip Technology

APT50M75JLLU2

MOSFET N-CH 500V 51A SOT227

Microchip Technology

31 -
Datasheet POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 51A (Tc) 10V 75mOhm @ 25.5A, 10V 5V @ 1mA 123 nC @ 10 V ±30V 5590 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
MSC015SMA070S Microchip Technology

MSC015SMA070S

SICFET N-CH 700V 126A D3PAK

Microchip Technology

20 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 126A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA (Typ) 215 nC @ 20 V +23V, -10V 4500 pF @ 700 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT10M11LVRG Microchip Technology

APT10M11LVRG

MOSFET N-CH 100V 100A TO264

Microchip Technology

19 -
Datasheet POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 11mOhm @ 50A, 10V 4V @ 2.5mA 450 nC @ 10 V ±30V 10300 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 (L)
MSC40SM120JCU2 Microchip Technology

MSC40SM120JCU2

SICFET N-CH 1.2KV 55A SOT227

Microchip Technology

12 -
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 20V 50mOhm @ 40A, 20V 2.7V @ 1mA 137 nC @ 20 V +25V, -10V 1990 pF @ 1000 V - 245W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
MSC017SMA120B4 Microchip Technology

MSC017SMA120B4

MOSFET SIC 1200V 17 MOHM TO-247

Microchip Technology

16 -
Datasheet - TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 113A (Tc) 20V 22mOhm @ 40A, 20V 2.7V @ 4.5mA (Typ) 249 nC @ 20 V +22V, -10V 5280 pF @ 1000 V - 455W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
APT58M80J Microchip Technology

APT58M80J

MOSFET N-CH 800V 60A SOT227

Microchip Technology

2 -
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 800 V 60A (Tc) 10V 110mOhm @ 43A, 10V 5V @ 5mA 570 nC @ 10 V ±30V 17550 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
MSC70SM120JCU3 Microchip Technology

MSC70SM120JCU3

SICFET N-CH 1.2KV 89A SOT227

Microchip Technology

5 -
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 395W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
APT10M19BVRG Microchip Technology

APT10M19BVRG

MOSFET N-CH 100V 75A TO247

Microchip Technology

53 -
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 19mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 6120 pF @ 25 V - - - - - Through Hole TO-247 [B]
APT5015BVFRG Microchip Technology

APT5015BVFRG

MOSFET N-CH 500V 32A TO247

Microchip Technology

40 -
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) - 150mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - - - Through Hole TO-247 [B]
MSC040SMA120B4N Microchip Technology

MSC040SMA120B4N

MOSFET SIC 1200 V 40 MOHM TO-247

Microchip Technology

60 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 71A (Tc) 18V, 20V 50mOhm @ 40A, 20V 5V @ 2mA 137 nC @ 20 V +23V, -10V 1962 pF @ 1000 V - 372W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.