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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NVH4L045N065SC1 onsemi

NVH4L045N065SC1

SIC MOS TO247-4L 650V

onsemi

422 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 55A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22V, -8V 1870 pF @ 325 V - 187W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
NVBG060N090SC1 onsemi

NVBG060N090SC1

SIC MOS N-CH 900V 5.8A D2PAK-7

onsemi

2,081 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 900 V 5.8A (Ta), 44A (Tc) 15V 84mOhm @ 20A, 15V 4.3V @ 5mA 88 nC @ 15 V +19V, -10V 1800 pF @ 450 V - 3.6W (Ta), 211W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
NVHL045N065SC1 onsemi

NVHL045N065SC1

SIC MOS TO247-3L 650V

onsemi

442 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 66A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22V, -8V 1870 pF @ 325 V - 291W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
NVH4L023N065M3S onsemi

NVH4L023N065M3S

SIC MOS TO247-4L 23MOHM 650V M3S

onsemi

450 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 67A (Tc) 15V, 18V 33mOhm @ 20A, 18V 4V @ 10mA 69 nC @ 18 V +22V, -8V 1952 pF @ 400 V - 245W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
NVBG040N120M3S onsemi

NVBG040N120M3S

SILICON CARBIDE (SIC) MOSFET-ELI

onsemi

760 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 57A (Tc) 18V 54mOhm @ 20A, 18V 4.4V @ 10mA 75 nC @ 18 V +22V, -10V 1700 pF @ 800 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
NVH4L027N65S3F onsemi

NVH4L027N65S3F

SF3 FRFET AUTO 27MOHM TO-247-4L

onsemi

799 -
Datasheet SuperFET® III, FRFET® TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 27.4mOhm @ 35A, 10V 5V @ 3mA 227 nC @ 10 V ±30V 7780 pF @ 400 V - 595W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4L
NVHL025N065SC1 onsemi

NVHL025N065SC1

SIC MOS TO247-3L 650V

onsemi

450 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 99A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V 4.3V @ 15.5mA 164 nC @ 18 V +22V, -8V 3480 pF @ 325 V - 348W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
NVH4L025N065SC1 onsemi

NVH4L025N065SC1

SIC MOS TO247-4L 650V

onsemi

882 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 99A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V 4.3V @ 15.5mA 164 nC @ 18 V +22V, -8V 3480 pF @ 325 V - 348W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
NTHL019N60S5F onsemi

NTHL019N60S5F

SUPERFET5 FRFET, 19MOHM, TO-247-

onsemi

442 -
Datasheet SuperFET® V, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 75A (Tc) 10V 19mOhm @ 37.5A,10V 4.8V @ 15.7mA 252 nC @ 10 V ±30V 13400 pF @ 400 V - 568W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
NVH4L030N120M3S onsemi

NVH4L030N120M3S

SILICON CARBIDE (SIC) MOSFET-ELI

onsemi

393 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 73A (Tc) 18V 39mOhm @ 30A, 18V 4.4V @ 15mA 107 nC @ 18 V +22V, -10V 2430 pF @ 800 V - 313W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.