FETs, MOSFETs
Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S2M0080120DMOSFET SILICON CARBIDE SIC 1200V |
211 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 54 nC @ 20 V | +25V, -10V | 1324 pF @ 1000 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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S2M0080120KMOSFET SILICON CARBIDE SIC 1200V |
260 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 54 nC @ 20 V | +25V, -10V | 1324 pF @ 1000 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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S2M0040120DMOSFET SILICON CARBIDE SIC 1200V |
221 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 |
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S2M0040120KMOSFET SILICON CARBIDE SIC 1200V |
103 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-4 |
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S2M0025120DMOSFET SILICON CARBIDE SIC 1200V |
300 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tj) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 130 nC @ 20 V | +25V, -10V | 4402 pF @ 1000 V | - | 446W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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S2M0025120KMOSFET SILICON CARBIDE SIC 1200V |
270 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 130 nC @ 20 V | +25V, -10V | 4402 pF @ 1000 V | - | 446W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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S1M1000170DMOSFET SILICON CARBIDE SIC 1700V |
290 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1700 V | 5.2A (Tc) | 20V | 1.3Ohm @ 2A, 20V | 4V @ 500µA | 10 nC @ 20 V | +25V, -10V | 160 pF @ 1000 V | - | 81W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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S1M1000170KMOSFET SILICON CARBIDE SIC 1700V |
300 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1700 V | 5.2A (Tc) | 20V | 1.3Ohm @ 2A, 20V | 4V @ 500µA | 10 nC @ 20 V | +25V, -10V | 160 pF @ 1000 V | - | 81W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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S2M0160120DMOSFET SILICON CARBIDE SIC 1200V |
285 | - |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 20V | 196mOhm @ 10A, 20V | 4V @ 2.5mA | 26.5 nC @ 20 V | +20V, -5V | 513 pF @ 1000 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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S2M0160120KMOSFET SILICON CARBIDE SIC 1200V |
294 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 20V | 196mOhm @ 10A, 20V | 4V @ 2.5mA | 26.5 nC @ 20 V | +20V, -5V | 513 pF @ 1000 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
FETs, MOSFETs FAQ
Common questions about filtering, comparing and sourcing FETs, MOSFETs components.
How can I narrow the FETs, MOSFETs selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.
