FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
S2M0120120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	264	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	150mOhm @ 13.3A, 20V	4V @ 3.3mA	29.6 nC @ 20 V	+20V, -5V	652 pF @ 1000 V	-	156W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD
S2M0120120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	295	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	150mOhm @ 13.3A, 20V	4V @ 3.3mA	29.6 nC @ 20 V	+20V, -5V	652 pF @ 1000 V	-	156W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
S2M0160120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	16A (Tc)	20V	196mOhm @ 10A, 20V	4V @ 2.5mA	26.5 nC @ 20 V	+20V, -5V	513 pF @ 1000 V	-	122W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
S2M0120120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	327	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	150mOhm @ 13.3A, 20V	4V @ 3.3mA	29.6 nC @ 20 V	+20V, -5V	652 pF @ 1000 V	-	153W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
S2M0080120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	230	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	37A (Tj)	20V	100mOhm @ 20A, 20V	4V @ 10mA	54 nC @ 20 V	+20V, -5V	1324 pF @ 1000 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
S2M0040120D-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	299	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tj)	20V	52mOhm @ 40A, 20V	4V @ 10mA	92.1 nC @ 20 V	+20V, -5V	1904 pF @ 1000 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD
S3M0040120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	65A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+20V, -8V	2844 pF @ 1000 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD
S2M0040120K-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tj)	20V	52mOhm @ 40A, 20V	4V @ 10mA	92.1 nC @ 20 V	+20V, -5V	1904 pF @ 1000 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
S3M0040120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	65A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+22V, -8V	2844 pF @ 1000 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
S3M0040120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	76A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+20V, -8V	2844 pF @ 1000 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.