FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AC2M1000170D SIC MOSFET N-CH 1700V 6A TO247-3 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	6A	20V	1.4Ohm @ 2A, 20V	4V @ 0.5mA	-	+25V, -10V	-	-	69W	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0280090D SIC MOSFET N-CH 900V 11A TO247-3 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	11A	15V	360mOhm @ 7.5A, 15V	3.5V @ 1.2mA	-	+19V, -8V	-	-	45W	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0120100K SIC MOSFET N-CH 1000V 24A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1000 V	24A	15V	155mOhm @ 15A, 15V	3.5V @ 3mA	-	+19V, -8V	-	-	83W	-55°C ~ 150°C	-	-	Through Hole	TO-247-4
AC2M0160120D SIC MOSFET N-CH 1200V 18A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	18A	20V	196mOhm @ 10A, 20V	4V @ 2.5mA	-	+25V, -10V	-	-	125W	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC2M0280120D SIC MOSFET N-CH 1200V 11A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	11A	20V	370mOhm @ 6A, 20V	4V @ 1.25mA	-	+25V, -10V	-	-	69.4W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0160120D SIC MOSFET N-CH 1200V 18A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	18A	15V	208mOhm @ 8.5A, 15V	3.6V @ 2.33mA	-	+19V, -8V	-	-	97W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0350120D SIC MOSFET N-CH 1200V 8A TO247-3 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	8A	15V	455mOhm @ 3.6A, 15V	3.6V @ 1mA	-	+19V, -8V	-	-	50W	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0120065K SIC MOSFET N-CH 650V 23A TO247-4 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	23A	15V	157mOhm @ 6.76A, 15V	3.6V @ 1.86mA	-	+19V, -8V	-	-	98W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0075120K SIC MOSFET N-CH 1200V 33A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	33A	15V	90mOhm @ 20A, 15V	3.6V @ 5mA	-	+19V, -8V	-	-	136W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC2M0080120D SIC MOSFET N-CH 1200V 37A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	37A	20V	98mOhm @ 20A, 20V	4V @ 5mA	-	+25V, -10V	-	-	129W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.