FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AC3M0120065D SIC MOSFET N-CH 650V 23A TO247-3 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	23A	15V	157mOhm @ 6.76A, 15V	3.6V @ 1.86mA	-	+19V, -8V	-	-	98W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
AC3M0120090D SIC MOSFET N-CH 900V 24A TO247-3 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	24A	15V	155mOhm @ 15A, 15V	3.5V @ 3mA	-	+19V, -8V	-	-	97W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0075120D SIC MOSFET N-CH 1200V 33A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	33A	15V	90mOhm @ 20A, 15V	3.6V @ 5mA	-	+19V, -8V	-	-	136W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
AC3M0060065K SIC MOSFET N-CH 650V 38A TO247-4 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	38A	15V	79mOhm @ 13.2A, 15V	3.6V @ 5mA	-	+19V, -8V	-	-	150W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0060065D SIC MOSFET N-CH 650V 30A TO247-3 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	30A	15V	79mOhm @ 13.2A, 15V	3.6V @ 5mA	-	+19V, -8V	-	-	150W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
AC3M0045065D SIC MOSFET N-CH 650V 50A TO247-3 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	50A	15V	60mOhm @ 17.6A, 15V	3.6V @ 4.84mA	-	+19V, -8V	-	-	176W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
AC3M0045065K SIC MOSFET N-CH 650V 50A TO247-4 APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	50A	15V	60mOhm @ 17.6A, 15V	3.6V @ 4.84mA	-	+19V, -8V	-	-	176W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC3M0040120K SIC MOSFET N-CH 1200V 67A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	67A	15V	53.5mOhm @ 33.3A, 15V	3.6V @ 9.2mA	-	+19V, -8V	-	-	326W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
AC2M0040120D SIC MOSFET N-CH 1200V 57A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	57A	20V	52mOhm @ 40A, 20V	4V @ 10mA	-	+25V, -10V	-	-	278W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3
AC3M0040120D SIC MOSFET N-CH 1200V 67A TO247- APSEMI	10,000	-	RFQ	Datasheet	*	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	67A	15V	53.5mOhm @ 33.3A, 15V	3.6V @ 9.5mA	-	+19V, -8V	-	-	326W	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.