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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHA17N80AEF-GE3 Vishay Siliconix

SIHA17N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

50 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Tc) 10V 305mOhm @ 8.5A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 1300 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
IRFZ48SPBF Vishay Siliconix

IRFZ48SPBF

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix

44 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHB21N60EF-GE3 Vishay Siliconix

SIHB21N60EF-GE3

MOSFET N-CH 600V 21A TO263AB

Vishay Siliconix

30 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2030 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHB35N60E-GE3 Vishay Siliconix

SIHB35N60E-GE3

MOSFET N-CH 650V 32A D2PAK

Vishay Siliconix

93 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 94mOhm @ 17A, 10V 4V @ 250µA 132 nC @ 10 V ±30V 2760 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHFL9110TR-GE3 Vishay Siliconix

SIHFL9110TR-GE3

MOSFET P-CH 100V 1.1A SOT223

Vishay Siliconix

964 -
Datasheet - TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 1.1A (Tc) 10V 1.2Ohm @ 660mA, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
IRF620STRRPBF Vishay Siliconix

IRF620STRRPBF

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix

800 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
SQ2362ES-T1_BE3 Vishay Siliconix

SQ2362ES-T1_BE3

MOSFET N-CH 60V 4.3A SOT23-3

Vishay Siliconix

405 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 4.3A (Tc) 4.5V, 10V 68mOhm @ 2.4A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 550 pF @ 30 V - 3W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
SIHFL210TR-GE3 Vishay Siliconix

SIHFL210TR-GE3

MOSFET N-CHANNEL 200V

Vishay Siliconix

348 -
Datasheet - TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 960mA (Tc) 10V 1.5Ohm @ 580mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
SQ2348ES-T1_GE3 Vishay Siliconix

SQ2348ES-T1_GE3

MOSFET N-CH 30V 8A TO236

Vishay Siliconix

60 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 24mOhm @ 12A, 10V 2.5V @ 250µA 14.5 nC @ 10 V ±20V 540 pF @ 15 V - 3W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
SI2343DS-T1-GE3 Vishay Siliconix

SI2343DS-T1-GE3

MOSFET P-CH 30V 3.1A SOT23-3

Vishay Siliconix

313 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.1A (Ta) 10V 53mOhm @ 4A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 540 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.