FETs, MOSFETs
Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI7463DP-T1-GE3MOSFET P-CH 40V 11A PPAK SO-8 |
9,772 | - |
|
Datasheet | TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 40 V | 11A (Ta) | 4.5V, 10V | 9.2mOhm @ 18.6A, 10V | 3V @ 250µA | 140 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRFB9N60APBFMOSFET N-CH 600V 9.2A TO220AB |
5,840 | - |
|
Datasheet | - | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIR836DP-T1-GE3MOSFET N-CH 40V 21A PPAK SO-8 |
8,425 | - |
|
Datasheet | TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 21A (Tc) | 4.5V, 10V | 19mOhm @ 10A, 10V | 2.5V @ 250µA | 18 nC @ 10 V | ±20V | 600 pF @ 20 V | - | 3.9W (Ta), 15.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SISA72DN-T1-GE3MOSFET N-CH 40V 60A PPAK1212-8 |
7,101 | - |
|
Datasheet | TrenchFET® Gen IV | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 3.5mOhm @ 10A, 10V | 2.4V @ 250µA | 30 nC @ 4.5 V | +20V, -16V | 3240 pF @ 20 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SIS488DN-T1-GE3MOSFET N-CH 40V 40A PPAK1212-8 |
9,682 | - |
|
Datasheet | TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.2V @ 250µA | 32 nC @ 10 V | ±20V | 1330 pF @ 20 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SIHA5N80AE-GE3E SERIES POWER MOSFET THIN-LEAD |
2,322 | - |
|
Datasheet | E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 1.35Ohm @ 1.5A, 10V | 4V @ 250µA | 16.5 nC @ 10 V | ±30V | 321 pF @ 100 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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SI7106DN-T1-GE3MOSFET N-CH 20V 12.5A PPAK1212-8 |
6,321 | - |
|
Datasheet | TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 12.5A (Ta) | 2.5V, 4.5V | 6.2mOhm @ 19.5A, 4.5V | 1.5V @ 250µA | 27 nC @ 4.5 V | ±12V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SIHD6N65E-GE3MOSFET N-CH 650V 7A DPAK |
2,977 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48 nC @ 10 V | ±30V | 820 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IRLIZ14GPBFMOSFET N-CH 60V 8A TO220-3 |
9,017 | - |
|
Datasheet | - | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Tc) | 4V, 5V | 200mOhm @ 4.8A, 5V | 2V @ 250µA | 8.4 nC @ 5 V | ±10V | 400 pF @ 25 V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
IRFS11N50APBFMOSFET N-CH 500V 11A D2PAK |
3,156 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±30V | 1423 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
FETs, MOSFETs FAQ
Common questions about filtering, comparing and sourcing FETs, MOSFETs components.
How can I narrow the FETs, MOSFETs selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.
