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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIRA84BDP-T1-GE3 Vishay Siliconix

SIRA84BDP-T1-GE3

MOSFET N-CH 30V 22A/70A PPAK SO8

Vishay Siliconix

3,404 -
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 70A (Tc) 4.5V, 10V 4.6mOhm @ 15A, 10V 2.4V @ 250µA 32 nC @ 10 V +20V, -16V 1050 pF @ 15 V - 3.7W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
IRF530SPBF Vishay Siliconix

IRF530SPBF

MOSFET N-CH 100V 14A TO263

Vishay Siliconix

2,572 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHB6N65E-GE3 Vishay Siliconix

SIHB6N65E-GE3

MOSFET N-CH 650V 7A D2PAK

Vishay Siliconix

6,309 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHA6N65E-E3 Vishay Siliconix

SIHA6N65E-E3

MOSFET N-CHANNEL 650V 7A TO220

Vishay Siliconix

2,348 -
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 1640 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIHB12N60E-GE3 Vishay Siliconix

SIHB12N60E-GE3

MOSFET N-CH 600V 12A D2PAK

Vishay Siliconix

9,837 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIS780DN-T1-GE3 Vishay Siliconix

SIS780DN-T1-GE3

MOSFET N-CH 30V 18A PPAK1212-8

Vishay Siliconix

5,217 -
Datasheet - PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Tc) 4.5V, 10V 13.5mOhm @ 15A, 10V 2.3V @ 250µA 24.5 nC @ 10 V ±20V 722 pF @ 15 V Schottky Diode (Body) 27.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
SI5448DU-T1-GE3 Vishay Siliconix

SI5448DU-T1-GE3

MOSFET N-CH 40V 25A PPAK

Vishay Siliconix

7,614 -
Datasheet TrenchFET® PowerPAK® ChipFET™ Single Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 25A (Tc) 4.5V, 10V 7.75mOhm @ 15A, 10V 2.5V @ 250µA 20 nC @ 4.5 V +20V, -16V 1765 pF @ 20 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® ChipFet Single
SIHP14N60E-GE3 Vishay Siliconix

SIHP14N60E-GE3

MOSFET N-CH 600V 13A TO220AB

Vishay Siliconix

8,456 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHP12N65E-GE3 Vishay Siliconix

SIHP12N65E-GE3

MOSFET N-CH 650V 12A TO220AB

Vishay Siliconix

4,304 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 1224 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHA14N60E-E3 Vishay Siliconix

SIHA14N60E-E3

MOSFET N-CHANNEL 600V 13A TO220

Vishay Siliconix

2,150 -
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.