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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHG15N60E-GE3 Vishay Siliconix

SIHG15N60E-GE3

MOSFET N-CH 600V 15A TO247AC

Vishay Siliconix

3,594 -
Datasheet E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFSL11N50APBF Vishay Siliconix

IRFSL11N50APBF

MOSFET N-CH 500V 11A TO262-3

Vishay Siliconix

7,155 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 6.6A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1426 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262-3
SIHD1K4N60E-GE3 Vishay Siliconix

SIHD1K4N60E-GE3

MOSFET N-CH 600V 4.2A TO252AA

Vishay Siliconix

8,300 -
Datasheet E TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 4.2A (Tc) 10V 1.45Ohm @ 500mA, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 172 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
SISS12DN-T1-GE3 Vishay Siliconix

SISS12DN-T1-GE3

MOSFET N-CH 40V 37.5A/60A PPAK

Vishay Siliconix

4,122 -
Datasheet TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 37.5A (Ta), 60A (Tc) 4.5V, 10V 1.98mOhm @ 10A, 10V 2.4V @ 250µA 89 nC @ 10 V +20V, -16V 4270 pF @ 20 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
SIHA22N60E-E3 Vishay Siliconix

SIHA22N60E-E3

MOSFET N-CH 600V 21A TO220

Vishay Siliconix

4,485 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SI3430DV-T1-GE3 Vishay Siliconix

SI3430DV-T1-GE3

MOSFET N-CH 100V 1.8A 6TSOP

Vishay Siliconix

7,804 -
Datasheet - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 1.8A (Ta) 6V, 10V 170mOhm @ 2.4A, 10V 2V @ 250µA (Min) 6.6 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
SIHP21N60EF-GE3 Vishay Siliconix

SIHP21N60EF-GE3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix

8,463 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2030 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIJ150DP-T1-GE3 Vishay Siliconix

SIJ150DP-T1-GE3

MOSFET N-CH 45V 30.9A/110A PPAK

Vishay Siliconix

5,590 -
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 30.9A (Ta), 110A (Tc) 4.5V, 10V 2.83mOhm @ 15A, 10V 2.3V @ 250µA 70 nC @ 10 V +20V, -16V 4000 pF @ 20 V - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIHP22N60E-GE3 Vishay Siliconix

SIHP22N60E-GE3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix

8,043 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole -
SUD50N04-8M8P-4BE3 Vishay Siliconix

SUD50N04-8M8P-4BE3

MOSFET N-CH 40V 14A/50A DPAK

Vishay Siliconix

4,500 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 50A (Tc) 4.5V, 10V 8.8mOhm @ 20A, 10V 3V @ 250µA 56 nC @ 10 V ±20V 2400 pF @ 20 V - 3.1W (Ta), 48.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.