FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SI4486EY-T1-GE3 MOSFET N-CH 100V 5.4A 8SO Vishay Siliconix	8,211	-	RFQ	Datasheet	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	5.4A (Ta)	6V, 10V	25mOhm @ 7.9A, 10V	2V @ 250µA (Min)	44 nC @ 10 V	±20V	-	-	1.8W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-SOIC
SI7411DN-T1-E3 MOSFET P-CH 20V 7.5A PPAK1212-8 Vishay Siliconix	3,514	-	RFQ	Datasheet	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	7.5A (Ta)	1.8V, 4.5V	19mOhm @ 11.4A, 4.5V	1V @ 300µA	41 nC @ 4.5 V	±8V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8
SUM90N08-7M6P-E3 MOSFET N-CH 75V 90A TO263 Vishay Siliconix	7,414	-	RFQ	Datasheet	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	90A (Tc)	10V	7.6mOhm @ 30A, 10V	4.8V @ 250µA	90 nC @ 10 V	±20V	3528 pF @ 30 V	-	3.75W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SIE860DF-T1-E3 MOSFET N-CH 30V 60A 10POLARPAK Vishay Siliconix	5,507	-	RFQ	Datasheet	TrenchFET®	10-PolarPAK® (M)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	60A (Tc)	4.5V, 10V	2.1mOhm @ 21.7A, 10V	2.5V @ 250µA	105 nC @ 10 V	±20V	4500 pF @ 15 V	-	5.2W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	10-PolarPAK® (M)
IRF730SPBF MOSFET N-CH 400V 5.5A D2PAK Vishay Siliconix	6,024	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	5.5A (Tc)	10V	1Ohm @ 3.3A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	700 pF @ 25 V	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF830LPBF MOSFET N-CH 500V 4.5A TO262-3 Vishay Siliconix	4,937	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	4.5A (Tc)	10V	1.5Ohm @ 2.7A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	610 pF @ 25 V	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-262-3
SIHB4N80E-GE3 MOSFET N-CH 800V 4.3A D2PAK Vishay Siliconix	9,159	-	RFQ	Datasheet	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.3A (Tc)	10V	1.27Ohm @ 2A, 10V	4V @ 250µA	32 nC @ 10 V	±30V	622 pF @ 100 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SI7636DP-T1-GE3 MOSFET N-CH 30V 17A PPAK SO-8 Vishay Siliconix	2,040	-	RFQ	Datasheet	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	17A (Ta)	4.5V, 10V	4mOhm @ 25A, 10V	3V @ 250µA	50 nC @ 4.5 V	±20V	5600 pF @ 15 V	-	1.9W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
IRF640L MOSFET N-CH 200V 18A I2PAK Vishay Siliconix	4,507	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	180mOhm @ 11A, 10V	4V @ 250µA	70 nC @ 10 V	±20V	1300 pF @ 25 V	-	3.1W (Ta), 130W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK
IRFBF20PBF-BE3 MOSFET N-CH 900V 1.7A TO220AB Vishay Siliconix	7,183	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	1.7A (Tc)	-	8Ohm @ 1A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	490 pF @ 25 V	-	54W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB

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FETs, MOSFETs FAQ

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