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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHA6N80E-GE3 Vishay Siliconix

SIHA6N80E-GE3

MOSFET N-CH 800V 5.4A TO220

Vishay Siliconix

3,283 -
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SUP18N15-95-E3 Vishay Siliconix

SUP18N15-95-E3

MOSFET N-CH 150V 18A TO220-3

Vishay Siliconix

7,171 -
Datasheet TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 6V, 10V 95mOhm @ 15A, 10V 2V @ 250µA (Min) 25 nC @ 10 V ±20V 900 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
SI4104DY-T1-GE3 Vishay Siliconix

SI4104DY-T1-GE3

MOSFET N-CH 100V 4.6A 8SO

Vishay Siliconix

3,095 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.6A (Tc) 10V 105mOhm @ 5A, 10V 4.5V @ 250µA 13 nC @ 10 V ±20V 446 pF @ 50 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SI4628DY-T1-GE3 Vishay Siliconix

SI4628DY-T1-GE3

MOSFET N-CH 30V 38A 8SO

Vishay Siliconix

2,219 -
Datasheet SkyFET®, TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 2.5V @ 1mA 87 nC @ 10 V ±20V 3450 pF @ 15 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRFBF20STRRPBF Vishay Siliconix

IRFBF20STRRPBF

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix

9,457 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFZ34STRLPBF Vishay Siliconix

IRFZ34STRLPBF

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix

3,684 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFZ24STRRPBF Vishay Siliconix

IRFZ24STRRPBF

MOSFET N-CH 60V 17A TO263

Vishay Siliconix

5,476 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFZ24STRLPBF Vishay Siliconix

IRFZ24STRLPBF

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix

7,950 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
SI4384DY-T1-E3 Vishay Siliconix

SI4384DY-T1-E3

MOSFET N-CH 30V 10A 8SO

Vishay Siliconix

3,114 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 8.5mOhm @ 15A, 10V 3V @ 250µA 18 nC @ 4.5 V ±20V - - 1.47W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRFD9220PBF Vishay Siliconix

IRFD9220PBF

MOSFET P-CH 200V 560MA 4DIP

Vishay Siliconix

2,742 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete P-Channel MOSFET (Metal Oxide) 200 V 560mA (Ta) 10V 1.5Ohm @ 340mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 340 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.