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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SUP53P06-20-GE3 Vishay Siliconix

SUP53P06-20-GE3

MOSFET P-CH 60V 9.2A/53A TO220AB

Vishay Siliconix

5,152 -
Datasheet TrenchFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 60 V 9.2A (Ta), 53A (Tc) 4.5V, 10V 19.5mOhm @ 30A, 10V 3V @ 250µA 115 nC @ 10 V ±20V 3500 pF @ 25 V - 3.1W (Ta), 104.2W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRLZ14L Vishay Siliconix

IRLZ14L

MOSFET N-CH 60V 10A TO262-3

Vishay Siliconix

6,801 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262-3
SIHB6N80E-GE3 Vishay Siliconix

SIHB6N80E-GE3

MOSFET N-CH 800V 5.4A D2PAK

Vishay Siliconix

2,041 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFD210 Vishay Siliconix

IRFD210

MOSFET N-CH 200V 600MA 4DIP

Vishay Siliconix

3,859 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 600mA (Ta) 10V 1.5Ohm @ 360mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
IRFR110 Vishay Siliconix

IRFR110

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix

3,706 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFR210TR Vishay Siliconix

IRFR210TR

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

4,953 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFD010 Vishay Siliconix

IRFD010

MOSFET N-CH 50V 1.7A 4DIP

Vishay Siliconix

3,649 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 50 V 1.7A (Tc) 10V 200mOhm @ 860mA, 10V 4V @ 250µA 13 nC @ 10 V ±20V 250 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
IRFD014 Vishay Siliconix

IRFD014

MOSFET N-CH 60V 1.7A 4DIP

Vishay Siliconix

9,386 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.7A (Ta) 10V 200mOhm @ 1A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 310 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-HVMDIP
IRFD9014 Vishay Siliconix

IRFD9014

MOSFET P-CH 60V 1.1A 4DIP

Vishay Siliconix

9,981 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 10V 500mOhm @ 660mA, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-HVMDIP
IRFR110TR Vishay Siliconix

IRFR110TR

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix

3,750 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.