FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRFBG30PBF-BE3 MOSFET N-CH 1000V 3.1A TO220AB Vishay Siliconix	1,362	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	3.1A (Tc)	10V	5Ohm @ 1.9A, 10V	4V @ 250µA	80 nC @ 10 V	±20V	980 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IRF9Z30PBF MOSFET P-CH 50V 18A TO220AB Vishay Siliconix	937	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	50 V	18A (Tc)	10V	140mOhm @ 9.3A, 10V	4V @ 250µA	39 nC @ 10 V	±20V	900 pF @ 25 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IRF9530STRLPBF MOSFET P-CH 100V 12A D2PAK Vishay Siliconix	2,901	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	12A (Tc)	10V	300mOhm @ 7.2A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	860 pF @ 25 V	-	3.7W (Ta), 88W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SUD50P10-43L-BE3 MOSFET P-CH 100V 9.2A/37.1A DPAK Vishay Siliconix	1,830	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	9.2A (Ta), 37.1A (Tc)	4.5V, 10V	43mOhm @ 9.2A, 10V	3V @ 250µA	160 nC @ 10 V	±20V	4600 pF @ 50 V	-	8.3W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA
IRF9620STRLPBF MOSFET P-CH 200V 3.5A D2PAK Vishay Siliconix	1,598	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.5A (Tc)	10V	1.5Ohm @ 1.5A, 10V	4V @ 250µA	22 nC @ 10 V	±20V	350 pF @ 25 V	-	3W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SIHB23N60E-GE3 MOSFET N-CH 600V 23A D2PAK Vishay Siliconix	200	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	23A (Tc)	10V	158mOhm @ 12A, 10V	4V @ 250µA	95 nC @ 10 V	±30V	2418 pF @ 100 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SIHB20N50E-GE3 MOSFET N-CH 500V 19A D2PAK Vishay Siliconix	2,422	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	19A (Tc)	10V	184mOhm @ 10A, 10V	4V @ 250µA	92 nC @ 10 V	±30V	1640 pF @ 100 V	-	179W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SUM90220E-GE3 MOSFET N-CH 200V 64A D2PAK Vishay Siliconix	730	-	RFQ	Datasheet	ThunderFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	64A (Tc)	7.5V, 10V	21.6mOhm @ 15A, 10V	4V @ 250µA	48 nC @ 10 V	±20V	1950 pF @ 100 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRFI9640GPBF MOSFET P-CH 200V 6.1A TO220-3 Vishay Siliconix	1,898	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	6.1A (Tc)	10V	500mOhm @ 3.7A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	1200 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
SIHB15N80AE-GE3 MOSFET N-CH 800V 13A D2PAK Vishay Siliconix	1,065	-	RFQ	Datasheet	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	13A (Tc)	10V	350mOhm @ 7.5A, 10V	4V @ 250µA	53 nC @ 10 V	±30V	1093 pF @ 100 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)

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FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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