FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SUD35N10-26P-GE3 MOSFET N-CH 100V 35A TO252 Vishay Siliconix	1,914	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	35A (Tc)	7V, 10V	26mOhm @ 12A, 10V	4.4V @ 250µA	47 nC @ 10 V	±20V	2000 pF @ 12 V	-	8.3W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA
SIHB11N80AE-GE3 MOSFET N-CH 800V 8A D2PAK Vishay Siliconix	972	-	RFQ	Datasheet	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	450mOhm @ 5.5A, 10V	4V @ 250µA	42 nC @ 10 V	±30V	804 pF @ 100 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SI4490DY-T1-E3 MOSFET N-CH 200V 2.85A 8SO Vishay Siliconix	2,029	-	RFQ	Datasheet	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	2.85A (Ta)	6V, 10V	80mOhm @ 4A, 10V	2V @ 250µA (Min)	42 nC @ 10 V	±20V	-	-	1.56W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC
SIHP15N50E-BE3 N-CHANNEL 500V Vishay Siliconix	1,829	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	14.5A (Tc)	10V	280mOhm @ 7.5A, 10V	4V @ 250µA	66 nC @ 10 V	±30V	1162 pF @ 100 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
SQM50034EL_GE3 MOSFET N-CH 60V 100A TO263 Vishay Siliconix	460	-	RFQ	Datasheet	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	4.5V, 10V	3.9mOhm @ 20A, 10V	2.5V @ 250µA	90 nC @ 10 V	±20V	6100 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)
IRF830ASPBF MOSFET N-CH 500V 5A D2PAK Vishay Siliconix	138	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	5A (Tc)	10V	1.4Ohm @ 3A, 10V	4.5V @ 250µA	24 nC @ 10 V	±30V	620 pF @ 25 V	-	3.1W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
SI4488DY-T1-E3 MOSFET N-CH 150V 3.5A 8SO Vishay Siliconix	4,291	-	RFQ	Datasheet	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	3.5A (Ta)	10V	50mOhm @ 5A, 10V	2V @ 250µA (Min)	36 nC @ 10 V	±20V	-	-	1.56W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC
SIR846ADP-T1-GE3 MOSFET N-CH 100V 60A PPAK SO-8 Vishay Siliconix	5,900	-	RFQ	Datasheet	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	60A (Tc)	6V, 10V	7.8mOhm @ 20A, 10V	3V @ 250µA	66 nC @ 10 V	±20V	2350 pF @ 50 V	-	5.4W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
SIR870ADP-T1-RE3 MOSFET N-CH 100V 60A PPAK SO-8 Vishay Siliconix	2,583	-	RFQ	Datasheet	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	60A (Tc)	4.5V, 10V	6.6mOhm @ 20A, 10V	3V @ 250µA	80 nC @ 10 V	±20V	2866 pF @ 50 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8
IRFI9634GPBF MOSFET P-CH 250V 4.1A TO220-3 Vishay Siliconix	2,848	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	P-Channel	MOSFET (Metal Oxide)	250 V	4.1A (Tc)	10V	1Ohm @ 2.5A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	680 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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