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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIR514DP-T1-RE3 Vishay Siliconix

SIR514DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix

1,305 -
Datasheet - PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 20.8A (Ta), 84.8A (Tc) 7.5V, 10V 5.8mOhm @ 10A, 10V 4V @ 250µA 47 nC @ 10 V ±20V 2550 pF @ 50 V - 5W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SI4630DY-T1-GE3 Vishay Siliconix

SI4630DY-T1-GE3

MOSFET N-CH 25V 40A 8SO

Vishay Siliconix

4,946 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Tc) 4.5V, 10V 2.7mOhm @ 20A, 10V 2.2V @ 250µA 161 nC @ 10 V ±16V 6670 pF @ 15 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SI4630DY-T1-E3 Vishay Siliconix

SI4630DY-T1-E3

MOSFET N-CH 25V 40A 8SO

Vishay Siliconix

2,774 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Tc) 4.5V, 10V 2.7mOhm @ 20A, 10V 2.2V @ 250µA 161 nC @ 10 V ±16V 6670 pF @ 15 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRF9Z34SPBF Vishay Siliconix

IRF9Z34SPBF

MOSFET P-CH 60V 18A D2PAK

Vishay Siliconix

145 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIR688DP-T1-GE3 Vishay Siliconix

SIR688DP-T1-GE3

MOSFET N-CH 60V 60A PPAK SO-8

Vishay Siliconix

1,258 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.7V @ 250µA 66 nC @ 10 V ±20V 3105 pF @ 30 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIHD7N60E-GE3 Vishay Siliconix

SIHD7N60E-GE3

MOSFET N-CH 600V 7A DPAK

Vishay Siliconix

134 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
SIHP11N80AE-GE3 Vishay Siliconix

SIHP11N80AE-GE3

MOSFET N-CH 800V 8A TO220AB

Vishay Siliconix

831 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SQJ401EP-T1_GE3 Vishay Siliconix

SQJ401EP-T1_GE3

MOSFET P-CH 12V 32A PPAK SO-8

Vishay Siliconix

294 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 32A (Tc) 2.5V, 4.5V 6mOhm @ 15A, 4.5V 1.5V @ 250µA 164 nC @ 4.5 V ±8V 10015 pF @ 6 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
SI4434ADY-T1-GE3 Vishay Siliconix

SI4434ADY-T1-GE3

MOSFET N-CH 250V 2.8A/4.1A 8SO

Vishay Siliconix

9,208 -
Datasheet ThunderFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 2.8A (Ta), 4.1A (Tc) 7.5V, 10V 150mOhm @ 2.8A, 10V 4V @ 250µA 16.5 nC @ 10 V ±20V 600 pF @ 125 V - 2.9W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF620SPBF Vishay Siliconix

IRF620SPBF

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix

847 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.