Welcome to Winsun (HK) Electronics Limited!
+86-(0755)8253 3846
FILTERED PRODUCT SELECTION

FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFBE30STRLPBF Vishay Siliconix

IRFBE30STRLPBF

MOSFET N-CH 800V 4.1A D2PAK

Vishay Siliconix

700 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHG180N60E-GE3 Vishay Siliconix

SIHG180N60E-GE3

MOSFET N-CH 600V 19A TO247AC

Vishay Siliconix

329 -
Datasheet E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFS9N60ATRLPBF Vishay Siliconix

IRFS9N60ATRLPBF

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix

950 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF644STRRPBF Vishay Siliconix

IRF644STRRPBF

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix

605 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHB105N60EF-GE3 Vishay Siliconix

SIHB105N60EF-GE3

MOSFET N-CH 600V 29A D2PAK

Vishay Siliconix

5,591 -
Datasheet EF TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 102mOhm @ 13A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1804 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHH11N60EF-T1-GE3 Vishay Siliconix

SIHH11N60EF-T1-GE3

MOSFET N-CH 600V 11A PPAK 8 X 8

Vishay Siliconix

1,405 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 357mOhm @ 5.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1078 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHG24N80AE-GE3 Vishay Siliconix

SIHG24N80AE-GE3

MOSFET N-CH 800V 21A TO247AC

Vishay Siliconix

460 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 21A (Tc) - 184mOhm @ 10A, 10V 4V @ 250µA 89 nC @ 10 V ±30V 1836 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHH250N60EF-T1GE3 Vishay Siliconix

SIHH250N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

3,050 -
Datasheet EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 250mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 915 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
IRFBC40LCPBF-BE3 Vishay Siliconix

IRFBC40LCPBF-BE3

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix

843 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) - 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHA125N60EF-GE3 Vishay Siliconix

SIHA125N60EF-GE3

MOSFET N-CH 600V 11A TO220

Vishay Siliconix

992 -
Datasheet EF TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
Total 3677 Record«Prev1... 7071727374757677...368Next»
WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.