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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHG47N60AE-GE3 Vishay Siliconix

SIHG47N60AE-GE3

MOSFET N-CH 600V 43A TO247AC

Vishay Siliconix

3,763 -
Datasheet E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 43A (Tc) 10V 65mOhm @ 24A, 10V 4V @ 250µA 182 nC @ 10 V ±30V 3600 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIJH5700E-T1-GE3 Vishay Siliconix

SIJH5700E-T1-GE3

N-CHANNEL 150 V (D-S) 175C MOSFE

Vishay Siliconix

1,978 -
Datasheet TrenchFET® PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 17A (Ta), 174A (Tc) 7.5V, 10V 4.1mOhm @ 20A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 7500 pF @ 75 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SUP85N10-10-GE3 Vishay Siliconix

SUP85N10-10-GE3

MOSFET N-CH 100V 85A TO220AB

Vishay Siliconix

500 -
Datasheet TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 6550 pF @ 25 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole -
SIHW47N60E-GE3 Vishay Siliconix

SIHW47N60E-GE3

MOSFET N-CH 600V 47A TO247AD

Vishay Siliconix

345 -
Datasheet - TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 64mOhm @ 24A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 9620 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
SIHH105N60EF-T1GE3 Vishay Siliconix

SIHH105N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

3,009 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 105mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 2099 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
IRFPC60PBF Vishay Siliconix

IRFPC60PBF

MOSFET N-CH 600V 16A TO247-3

Vishay Siliconix

302 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 400mOhm @ 9.6A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 3900 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHG47N60EF-GE3 Vishay Siliconix

SIHG47N60EF-GE3

MOSFET N-CH 600V 47A TO247AC

Vishay Siliconix

463 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 67mOhm @ 24A, 10V 4V @ 250µA 225 nC @ 10 V ±30V 4854 pF @ 100 V - 379W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHH070N60EF-T1GE3 Vishay Siliconix

SIHH070N60EF-T1GE3

MOSFET N-CH 600V 36A PPAK 8 X 8

Vishay Siliconix

3,000 -
Datasheet EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 71mOhm @ 15A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2647 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHK055N60E-T1-GE3 Vishay Siliconix

SIHK055N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix

1,967 -
Datasheet E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 56mOhm @ 16A, 10V 5V @ 250µA 81 nC @ 10 V ±30V 3504 pF @ 100 V - 236W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
SIHG47N60AEF-GE3 Vishay Siliconix

SIHG47N60AEF-GE3

MOSFET N-CH 600V 40A TO247AC

Vishay Siliconix

216 -
Datasheet EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 70mOhm @ 23.5A, 10V 4V @ 250µA 189 nC @ 10 V ±30V 3576 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.