FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
HUF75337P3 MOSFET N-CH 55V 75A TO220-3 Harris Corporation	2,600	-	RFQ	Datasheet	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	-	14mOhm @ 75A, 10V	4V @ 250µA	109 nC @ 20 V	±20V	1775 pF @ 25 V	-	175W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3
RFP2NO8L 2A, 80V, 1.05OHM, N CHANNEL MOSF Harris Corporation	1,609	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HUF75307T3ST136 13A, 55V, 0.090 OHM, N CHANNEL, Harris Corporation	3,263	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF512S2532 4.9A, 100V, 0.74 OHM, N-CHANNEL Harris Corporation	1,200	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RFP2P08 P-CHANNEL POWER MOSFET Harris Corporation	3,542	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	80 V	2A (Tc)	10V	3.5Ohm @ 1A, 10V	4V @ 1mA	-	±20V	150 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
RFP2N08 N-CHANNEL, MOSFET Harris Corporation	3,360	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	2A (Tc)	10V	1.05Ohm @ 2A, 5V	4V @ 250µA	-	±20V	200 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
HUF75309D3S MOSFET N-CH 55V 19A DPAK Harris Corporation	14,180	-	RFQ	Datasheet	UltraFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	19A (Tc)	10V	70mOhm @ 19A, 10V	4V @ 250µA	24 nC @ 20 V	±20V	350 pF @ 25 V	-	55W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
RFP2N10 N-CHANNEL, MOSFET Harris Corporation	1,323	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	2A (Tc)	10V	1.05Ohm @ 2A, 5V	4V @ 250µA	-	±20V	200 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
RFD4N06L N-CHANNEL POWER MOSFET Harris Corporation	1,424	-	RFQ	Datasheet	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	4A (Tc)	5V	600mOhm @ 1A, 5V	2.5V @ 250µA	8 nC @ 10 V	±10V	-	-	30W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK
RFD8P06E P-CHANNEL POWER MOSFET Harris Corporation	2,278	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.