FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
RFD3N08L N-CHANNEL POWER MOSFET Harris Corporation	1,346	-	RFQ	Datasheet	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	3A (Tc)	5V	800mOhm @ 1.5A, 5V	2.5V @ 250µA	8 nC @ 10 V	±10V	-	-	30W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK
IRF613 N-CHANNEL POWER MOSFET Harris Corporation	2,940	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	150 V	2.6A (Tc)	10V	2.4Ohm @ 1.6A, 10V	4V @ 250µA	8.2 nC @ 10 V	±20V	135 pF @ 25 V	-	43W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IRFU110 4.7A 100V 0.540 OHM N-CHANNEL Harris Corporation	2,825	-	RFQ	Datasheet	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	4.3A (Tc)	10V	540mOhm @ 900mA, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA
RFP4N06 N-CHANNEL POWER MOSFET Harris Corporation	1,079	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	4A (Tc)	10V	800mOhm @ 4A, 10V	4V @ 250µA	-	±20V	200 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
IRF523 N-CHANNEL POWER MOSFET Harris Corporation	2,608	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	8A (Tc)	10V	360mOhm @ 5.6A, 10V	4V @ 250µA	15 nC @ 10 V	±20V	350 pF @ 25 V	-	60W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220
RFD3N08LSM9A N-CHANNEL POWER MOSFET Harris Corporation	2,425	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	3A (Tc)	5V	800mOhm @ 3A, 5V	2.5V @ 250µA	8.5 nC @ 10 V	±10V	125 pF @ 25 V	-	30W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
IRFU9110 3.1A 100V 1.200 OHM P-CHANNEL Harris Corporation	1,735	-	RFQ	Datasheet	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	100 V	3.1A (Tc)	10V	1.2Ohm @ 1.9A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA
RFP14N06L N-CHANNEL POWER MOSFET Harris Corporation	1,085	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFD9110 0.7A 100V 1.200 OHM P-CHANNEL Harris Corporation	11,617	-	RFQ	Datasheet	-	4-DIP (0.300", 7.62mm)	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	100 V	700mA (Ta)	10V	1.2Ohm @ 420mA, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	4-DIP, Hexdip, HVMDIP
IRFR121 N-CHANNEL POWER MOSFET Harris Corporation	2,880	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	8.4A	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-252 (DPAK)

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.