FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
RFP4N40 N-CHANNEL POWER MOSFET Harris Corporation	546	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	400 V	4A (Tc)	10V	2Ohm @ 2A, 10V	4V @ 1mA	-	±20V	750 pF @ 25 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
RF1S45N02L 45A, 20V, 0.022OHM, N-CHANNEL LO Harris Corporation	999	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20 V	45A (Tc)	5V	22mOhm @ 45A, 5V	2V @ 250µA	60 nC @ 10 V	±10V	1300 pF @ 15 V	-	90W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262 (I2PAK)
IRF626 N-CHANNEL POWER MOSFET Harris Corporation	997	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	275 V	3.8A (Tc)	10V	1.1Ohm @ 1.4A, 10V	4V @ 250µA	22 nC @ 10 V	±20V	340 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IRFR220 MOSFET N-CH 200V 4.6A TO252AA Harris Corporation	528	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	4.6A (Tc)	-	800mOhm @ 2.4A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	330 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA
BUZ76 N-CHANNEL POWER MOSFET Harris Corporation	700	-	RFQ	Datasheet	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	400 V	3A (Tc)	10V	1.8Ohm @ 2A, 10V	4V @ 1mA	-	±20V	650 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IRF730R4587 5.5A 400V 1.000 OHM N-CHANNEL Harris Corporation	1,000	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RF1S15N08L LOGIC LEVEL GATE (5V) DEVICE Harris Corporation	800	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	80 V	45A	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263AB
IRFR9110 MOSFET P-CH 100V 3.1A DPAK Harris Corporation	554	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	100 V	3.1A (Tc)	-	1.2Ohm @ 1.9A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IRFF322 N-CHANNEL POWER MOSFET Harris Corporation	500	-	RFQ	Datasheet	-	TO-205AF Metal Can	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	400 V	2A (Tc)	10V	2.5Ohm @ 1.25A, 10V	4V @ 250µA	15 nC @ 10 V	20V	450 pF @ 25 V	-	20W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-205AF (TO-39)
RF1S23N06LESM9A N-CHANNEL POWER MOSFET Harris Corporation	800	-	RFQ	Datasheet	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.