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FILTERED PRODUCT SELECTION

FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK380A65Y,S4X Toshiba Semiconductor and Storage

TK380A65Y,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

87 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 9.7A (Tc) 10V 380mOhm @ 4.9A, 10V 4V @ 360µA 20 nC @ 10 V ±30V 590 pF @ 300 V - 30W (Tc) 150°C - - Through Hole TO-220SIS
TK6A80E,S4X Toshiba Semiconductor and Storage

TK6A80E,S4X

MOSFET N-CH 800V 6A TO220SIS

Toshiba Semiconductor and Storage

50 -
Datasheet π-MOSVIII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 1.7Ohm @ 3A, 10V 4V @ 600µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK17A65W,S5X Toshiba Semiconductor and Storage

TK17A65W,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

34 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK12A80W,S4X Toshiba Semiconductor and Storage

TK12A80W,S4X

MOSFET N-CH 800V 11.5A TO220SIS

Toshiba Semiconductor and Storage

40 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 11.5A (Ta) 10V 450mOhm @ 5.8A, 10V 4V @ 570µA 23 nC @ 10 V ±20V 1400 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK17A65W5,S5X Toshiba Semiconductor and Storage

TK17A65W5,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

45 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 230mOhm @ 8.7A, 10V 4.5V @ 900µA 50 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK155A65Z,S4X Toshiba Semiconductor and Storage

TK155A65Z,S4X

MOSFET N-CH 650V 18A TO220SIS

Toshiba Semiconductor and Storage

40 -
Datasheet DTMOSVI TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 155mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 40W (Tc) 150°C - - Through Hole TO-220SIS
TK20N60W5,S1VF Toshiba Semiconductor and Storage

TK20N60W5,S1VF

MOSFET N-CH 600V 20A TO247

Toshiba Semiconductor and Storage

29 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole TO-247
TK16N60W,S1VF Toshiba Semiconductor and Storage

TK16N60W,S1VF

MOSFET N CH 600V 15.8A TO247

Toshiba Semiconductor and Storage

26 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-247
TK110A65Z,S4X Toshiba Semiconductor and Storage

TK110A65Z,S4X

MOSFET N-CH 650V 24A TO220SIS

Toshiba Semiconductor and Storage

42 -
Datasheet DTMOSVI TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK14N65W5,S1F Toshiba Semiconductor and Storage

TK14N65W5,S1F

MOSFET N-CH 650V 13.7A TO247

Toshiba Semiconductor and Storage

30 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-247
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.