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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TPN2R903PL,L1Q Toshiba Semiconductor and Storage

TPN2R903PL,L1Q

MOSFET N-CH 30V 70A 8TSON

Toshiba Semiconductor and Storage

36,136 -
Datasheet U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 2.9mOhm @ 35A, 10V 2.1V @ 200µA 26 nC @ 10 V ±20V 2300 pF @ 15 V - 630mW (Ta), 75W (Tc) 175°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TPH8R903NL,LQ Toshiba Semiconductor and Storage

TPH8R903NL,LQ

MOSFET N CH 30V 20A 8SOP

Toshiba Semiconductor and Storage

3,150 -
Datasheet U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 8.9mOhm @ 10A, 10V 2.3V @ 1mA 9.8 nC @ 10 V ±20V 820 pF @ 15 V - 1.6W (Ta), 24W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
SSM10N954L,EFF Toshiba Semiconductor and Storage

SSM10N954L,EFF

COMMON-DRAIN NCH MOSFET, 12V, 13

Toshiba Semiconductor and Storage

9,865 -
Datasheet - 10-SMD, No Lead Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12 V 13.5A (Ta) 2.5V, 4.5V 2.75mOhm @ 6A, 4.5V 1.4V @ 1.11mA 25 nC @ 4 V ±8V - - 800mW (Ta) 150°C - - Surface Mount TCSPAC-153001
2SJ168TE85LF Toshiba Semiconductor and Storage

2SJ168TE85LF

MOSFET P-CH 60V 200MA SC59

Toshiba Semiconductor and Storage

12,605 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 10V 2Ohm @ 50mA, 10V - - ±20V 85 pF @ 10 V - 200mW (Ta) 150°C (TJ) - - Surface Mount SC-59
TPN11006NL,LQ Toshiba Semiconductor and Storage

TPN11006NL,LQ

MOSFET N-CH 60V 17A 8TSON

Toshiba Semiconductor and Storage

13,285 -
Datasheet U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4.5V, 10V 11.4mOhm @ 8.5A, 10V 2.5V @ 200µA 23 nC @ 10 V ±20V 2000 pF @ 30 V - 700mW (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.1x3.1)
TPN22006NH,LQ Toshiba Semiconductor and Storage

TPN22006NH,LQ

MOSFET N-CH 60V 9A 8TSON

Toshiba Semiconductor and Storage

5,752 -
Datasheet U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta) 6.5V, 10V 22mOhm @ 4.5A, 10V 4V @ 100µA 12 nC @ 10 V ±20V 710 pF @ 30 V - 700mW (Ta), 18W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
TJ10S04M3L,LXHQ Toshiba Semiconductor and Storage

TJ10S04M3L,LXHQ

MOSFET P-CH 40V 10A DPAK

Toshiba Semiconductor and Storage

3,780 -
Datasheet U-MOSVI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 6V, 10V 44mOhm @ 5A, 10V 3V @ 1mA 19 nC @ 10 V +10V, -20V 930 pF @ 10 V - 27W (Tc) 175°C - - Surface Mount DPAK+
TK15S04N1L,LXHQ Toshiba Semiconductor and Storage

TK15S04N1L,LXHQ

MOSFET N-CH 40V 15A DPAK

Toshiba Semiconductor and Storage

1,922 -
Datasheet U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta) 4.5V, 10V 17.8mOhm @ 7.5A, 10V 2.5V @ 100µA 10 nC @ 10 V ±20V 610 pF @ 10 V - 46W (Tc) 175°C - - Surface Mount DPAK+
TPN7R006PL,L1Q Toshiba Semiconductor and Storage

TPN7R006PL,L1Q

MOSFET N-CH 60V 54A 8TSON

Toshiba Semiconductor and Storage

9,946 -
Datasheet U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 54A (Tc) 4.5V, 10V 7mOhm @ 27A, 10V 2.5V @ 200µA 20 nC @ 10 V ±20V 1875 pF @ 30 V - 630mW (Ta), 75W (Tc) 175°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TPN3300ANH,LQ Toshiba Semiconductor and Storage

TPN3300ANH,LQ

MOSFET N-CH 100V 9.4A 8TSON

Toshiba Semiconductor and Storage

7,306 -
Datasheet U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 10V 33mOhm @ 4.7A, 10V 4V @ 100µA 11 nC @ 10 V ±20V 880 pF @ 50 V - 700mW (Ta), 27W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.