FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK11S10N1L,LXHQ MOSFET N-CH 100V 11A DPAK Toshiba Semiconductor and Storage	3,837	-	RFQ	Datasheet	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	11A (Ta)	4.5V, 10V	28mOhm @ 5.5A, 10V	2.5V @ 100µA	15 nC @ 10 V	±20V	850 pF @ 10 V	-	65W (Tc)	175°C	-	-	Surface Mount	DPAK+
TPH3R704PC,LQ MOSFET N-CH 40V 82A 8SOP Toshiba Semiconductor and Storage	1,635	-	RFQ	Datasheet	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	82A (Tc)	4.5V, 10V	3.7mOhm @ 41A, 10V	2.4V @ 300µA	47 nC @ 10 V	±20V	3615 pF @ 20 V	-	830mW (Ta), 90W (Tc)	175°C	-	-	Surface Mount	8-SOP Advance (5x5)
TPN7R506NH,L1Q MOSFET N-CH 60V 26A 8TSON Toshiba Semiconductor and Storage	11,620	-	RFQ	Datasheet	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	26A (Tc)	6.5V, 10V	7.5mOhm @ 13A, 10V	4V @ 200µA	22 nC @ 10 V	±20V	1800 pF @ 30 V	-	700mW (Ta), 42W (Tc)	150°C (TJ)	-	-	Surface Mount	8-TSON Advance (3.1x3.1)
TPN13008NH,L1Q MOSFET N-CH 80V 18A 8TSON Toshiba Semiconductor and Storage	4,415	-	RFQ	Datasheet	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	18A (Tc)	10V	13.3mOhm @ 9A, 10V	4V @ 200µA	18 nC @ 10 V	±20V	1600 pF @ 40 V	-	700mW (Ta), 42W (Tc)	150°C (TJ)	-	-	Surface Mount	8-TSON Advance (3.1x3.1)
TK40S06N1L,LXHQ MOSFET N-CH 60V 40A DPAK Toshiba Semiconductor and Storage	6,970	-	RFQ	Datasheet	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	40A (Ta)	4.5V, 10V	18mOhm @ 20A, 10V	2.5V @ 200µA	26 nC @ 10 V	±20V	1650 pF @ 10 V	-	88.2W (Tc)	175°C	-	-	Surface Mount	DPAK+
TPH4R003NL,L1Q MOSFET N-CH 30V 40A 8SOP Toshiba Semiconductor and Storage	4,086	-	RFQ	Datasheet	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	40A (Tc)	4.5V, 10V	4mOhm @ 20A, 10V	2.3V @ 200µA	14.8 nC @ 10 V	±20V	1400 pF @ 15 V	-	1.6W (Ta), 36W (Tc)	150°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)
TPH14006NH,L1Q MOSFET N CH 60V 14A 8-SOP ADV Toshiba Semiconductor and Storage	4,380	-	RFQ	Datasheet	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	14A (Ta)	6.5V, 10V	14mOhm @ 7A, 10V	4V @ 200µA	16 nC @ 10 V	±20V	1300 pF @ 30 V	-	1.6W (Ta), 32W (Tc)	150°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)
TPH2R104PL,LQ MOSFET N-CH 40V 100A 8SOP Toshiba Semiconductor and Storage	11,371	-	RFQ	Datasheet	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	2.1mOhm @ 50A, 10V	2.4V @ 500µA	78 nC @ 10 V	±20V	6230 pF @ 20 V	-	830mW (Ta), 116W (Tc)	175°C	-	-	Surface Mount	8-SOP Advance (5x5)
XPN12006NC,L1XHQ MOSFET N-CH 60V 20A 8TSON Toshiba Semiconductor and Storage	9,542	-	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	20A	4.5V, 10V	12mOhm @ 10A, 10V	2.5V @ 200µA	23 nC @ 10 V	±20V	1100 pF @ 10 V	-	65W (Tc)	-55°C ~ 175°C	Automotive	AEC-Q101	Surface Mount	8-TSON Advance-WF (3.1x3.1)
TK65S04N1L,LXHQ MOSFET N-CH 40V 65A DPAK Toshiba Semiconductor and Storage	4,642	-	RFQ	Datasheet	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	65A (Ta)	4.5V, 10V	4.3mOhm @ 32.5A, 10V	2.5V @ 300µA	39 nC @ 10 V	±20V	2550 pF @ 10 V	-	107W (Tc)	175°C	-	-	Surface Mount	DPAK+

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FETs, MOSFETs FAQ

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