FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
XPN7R104NC,L1XHQ MOSFET N-CH 40V 20A 8TSON Toshiba Semiconductor and Storage	11,107	-	RFQ	Datasheet	U-MOSIII	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	20A (Ta)	4.5V, 10V	7.1mOhm @ 10A, 10V	2.5V @ 200µA	21 nC @ 10 V	±20V	1290 pF @ 10 V	-	840mW (Ta), 65W (Tc)	175°C	-	-	Surface Mount	8-TSON Advance-WF (3.1x3.1)
XPN3R804NC,L1XHQ MOSFET N-CH 40V 40A 8TSON Toshiba Semiconductor and Storage	14,885	-	RFQ	Datasheet	U-MOSVIII	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	40A (Ta)	4.5V, 10V	3.8mOhm @ 20A, 10V	2.5V @ 300µA	35 nC @ 10 V	±20V	2230 pF @ 10 V	-	840mW (Ta), 100W (Tc)	175°C	-	-	Surface Mount	8-TSON Advance-WF (3.1x3.1)
TK33S10N1L,LXHQ MOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage	3,536	-	RFQ	Datasheet	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Ta)	4.5V, 10V	9.7mOhm @ 16.5A, 10V	2.5V @ 500µA	33 nC @ 10 V	±20V	2250 pF @ 10 V	-	125W (Tc)	175°C	-	-	Surface Mount	DPAK+
TPN5900CNH,L1Q MOSFET N-CH 150V 9A 8TSON Toshiba Semiconductor and Storage	4,036	-	RFQ	Datasheet	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	9A (Ta)	10V	59mOhm @ 4.5A, 10V	4V @ 200µA	7 nC @ 10 V	±20V	600 pF @ 75 V	-	700mW (Ta), 39W (Tc)	150°C (TJ)	-	-	Surface Mount	8-TSON Advance (3.1x3.1)
TK560P65Y,RQ MOSFET N-CHANNEL 650V 7A DPAK Toshiba Semiconductor and Storage	3,844	-	RFQ	Datasheet	DTMOSV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	560mOhm @ 3.5A, 10V	4V @ 240µA	14.5 nC @ 10 V	±30V	380 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Surface Mount	DPAK
XPN6R706NC,L1XHQ MOSFET N-CH 60V 40A 8TSON Toshiba Semiconductor and Storage	27,960	-	RFQ	Datasheet	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	40A (Ta)	4.5V, 10V	6.7mOhm @ 20A, 10V	2.5V @ 300µA	35 nC @ 10 V	±20V	2000 pF @ 10 V	-	840mW (Ta), 100W (Tc)	175°C	-	-	Surface Mount	8-TSON Advance-WF (3.1x3.1)
TK5R1P08QM,RQ UMOS10 DPAK 80V 5.1MOHM Toshiba Semiconductor and Storage	15,659	-	RFQ	Datasheet	U-MOSX-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	84A (Tc)	6V, 10V	5.1mOhm @ 42A, 10V	3.5V @ 700µA	56 nC @ 10 V	±20V	3980 pF @ 40 V	-	104W (Tc)	175°C	-	-	Surface Mount	DPAK
TK560P60Y,RQ MOSFET N-CHANNEL 600V 7A DPAK Toshiba Semiconductor and Storage	5,542	-	RFQ	Datasheet	DTMOSV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	560mOhm @ 3.5A, 10V	4V @ 240µA	14.5 nC @ 10 V	±30V	380 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Surface Mount	DPAK
TPH7R506NH,L1Q MOSFET N-CH 60V 22A 8SOP Toshiba Semiconductor and Storage	25,501	-	RFQ	Datasheet	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	22A (Ta)	10V	7.5mOhm @ 11A, 10V	4V @ 300µA	31 nC @ 10 V	±20V	2320 pF @ 30 V	-	1.6W (Ta), 45W (Tc)	150°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)
TK7S10N1Z,LQ MOSFET N-CH 100V 7A DPAK Toshiba Semiconductor and Storage	6,884	-	RFQ	Datasheet	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7A (Ta)	10V	48mOhm @ 3.5A, 10V	4V @ 100µA	7.1 nC @ 10 V	±20V	470 pF @ 10 V	-	50W (Tc)	175°C (TJ)	-	-	Surface Mount	DPAK+

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FETs, MOSFETs FAQ

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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