FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TPCP8103-H(TE85LFM MOSFET P-CH 40V 4.8A PS-8 Toshiba Semiconductor and Storage	8,833	-	RFQ	Datasheet	U-MOSIII-H	8-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	4.8A (Ta)	4.5V, 10V	40mOhm @ 2.4A, 10V	2V @ 1mA	19 nC @ 10 V	±20V	800 pF @ 10 V	-	840mW (Ta)	150°C (TJ)	-	-	Surface Mount	PS-8 (2.9x2.4)
SSM6K411TU(TE85L,F MOSFET N-CH 20V 10A UF6 Toshiba Semiconductor and Storage	5,684	-	RFQ	Datasheet	U-MOSIV	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	10A (Ta)	2.5V, 4.5V	12mOhm @ 7A, 4.5V	1.2V @ 1mA	9.4 nC @ 4.5 V	±12V	710 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	UF6
TPCP8005-H(TE85L,F MOSFET N-CH 30V 11A PS-8 Toshiba Semiconductor and Storage	9,259	-	RFQ	Datasheet	U-MOSV-H	8-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta)	4.5V, 10V	12.9mOhm @ 5.5A, 10V	2.5V @ 1mA	20 nC @ 10 V	±20V	2150 pF @ 10 V	-	840mW (Ta)	150°C (TJ)	-	-	Surface Mount	PS-8 (2.9x2.4)
SSM6J206FE(TE85L,F MOSFET P-CH 20V 2A ES6 Toshiba Semiconductor and Storage	7,748	-	RFQ	Datasheet	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	2A (Ta)	1.8V, 4V	130mOhm @ 1A, 4V	1V @ 1mA	-	±8V	335 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	ES6
TPCP8004(TE85L,F) MOSFET N-CH 30V 8.3A PS-8 Toshiba Semiconductor and Storage	6,807	-	RFQ	Datasheet	U-MOSIV	8-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	8.3A (Ta)	4.5V, 10V	8.5mOhm @ 4.2A, 10V	2.5V @ 1mA	26 nC @ 10 V	±20V	1270 pF @ 10 V	-	840mW (Ta)	150°C (TJ)	-	-	Surface Mount	PS-8 (2.9x2.4)
TK50P03M1(T6RSS-Q) MOSFET N-CH 30V 50A DP Toshiba Semiconductor and Storage	2,681	-	RFQ	Datasheet	U-MOSVI-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	50A (Ta)	4.5V, 10V	7.5mOhm @ 25A, 10V	2.3V @ 200µA	25.3 nC @ 10 V	±20V	1700 pF @ 10 V	-	47W (Tc)	150°C (TJ)	-	-	Surface Mount	DPAK
2SK2231(TE16R1,NQ) MOSFET N-CH 60V 5A PW-MOLD Toshiba Semiconductor and Storage	7,096	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	5A (Ta)	4V, 10V	160mOhm @ 2.5A, 10V	2V @ 1mA	12 nC @ 10 V	±20V	370 pF @ 10 V	-	20W (Tc)	150°C (TJ)	-	-	Surface Mount	PW-MOLD
TK50P04M1(T6RSS-Q) MOSFET N-CH 40V 50A DP Toshiba Semiconductor and Storage	3,893	-	RFQ	Datasheet	U-MOSVI-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	50A (Ta)	4.5V, 10V	8.7mOhm @ 25A, 10V	2.3V @ 500µA	38 nC @ 10 V	±20V	2600 pF @ 10 V	-	60W (Tc)	150°C (TJ)	-	-	Surface Mount	DPAK
2SK3798(STA4,Q,M) POWER MOSFET TRANSISTOR TO-220(S Toshiba Semiconductor and Storage	2,046	-	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	900 V	4A (Ta)	10V	3.5Ohm @ 2A, 10V	4V @ 1mA	26 nC @ 10 V	±30V	800 pF @ 25 V	-	40W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK8A45DA(STA4,Q,M) MOSFET N-CH 450V 7.5A TO220SIS Toshiba Semiconductor and Storage	5,706	-	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	450 V	7.5A (Tc)	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220SIS

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FETs, MOSFETs FAQ

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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