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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK20J60U(F) Toshiba Semiconductor and Storage

TK20J60U(F)

MOSFET N-CH 600V 20A TO3P

Toshiba Semiconductor and Storage

6,347 -
Datasheet DTMOSII TO-3P-3, SC-65-3 Tray Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 190mOhm @ 10A, 10V 5V @ 1mA 27 nC @ 10 V ±30V 1470 pF @ 10 V - 190W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
TK55D10J1(Q) Toshiba Semiconductor and Storage

TK55D10J1(Q)

MOSFET N-CH 100V 55A TO220

Toshiba Semiconductor and Storage

3,005 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 55A (Ta) 4.5V, 10V 10.5mOhm @ 27A, 10V 2.3V @ 1mA 110 nC @ 10 V ±20V 5700 pF @ 10 V - 140W (Tc) 150°C (TJ) - - Through Hole TO-220(W)
TK60D08J1(Q) Toshiba Semiconductor and Storage

TK60D08J1(Q)

MOSFET N-CH 75V 60A TO220

Toshiba Semiconductor and Storage

9,983 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 60A (Ta) 4.5V, 10V 7.8mOhm @ 30A, 10V 2.3V @ 1mA 86 nC @ 10 V ±20V 5450 pF @ 10 V - 140W (Tc) 150°C (TJ) - - Through Hole TO-220(W)
TK70D06J1(Q) Toshiba Semiconductor and Storage

TK70D06J1(Q)

MOSFET N-CH 60V 70A TO220

Toshiba Semiconductor and Storage

6,899 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 70A (Ta) 4.5V, 10V 6.4mOhm @ 35A, 10V 2.3V @ 1mA 87 nC @ 10 V ±20V 5450 pF @ 10 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220(W)
TPC6006-H(TE85L,F) Toshiba Semiconductor and Storage

TPC6006-H(TE85L,F)

MOSFET N-CH 40V 3.9A VS-6

Toshiba Semiconductor and Storage

2,549 -
Datasheet U-MOSIII-H SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 3.9A (Ta) 4.5V, 10V 75mOhm @ 1.9A, 10V 2.3V @ 1mA 4.4 nC @ 10 V ±20V 251 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6104(TE85L,F,M) Toshiba Semiconductor and Storage

TPC6104(TE85L,F,M)

MOSFET P-CH 20V 5.5A VS-6

Toshiba Semiconductor and Storage

6,047 -
Datasheet U-MOSIII SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.8V, 4.5V 40mOhm @ 2.8A, 4.5V 1.2V @ 200µA 19 nC @ 5 V ±8V 1430 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6107(TE85L,F,M) Toshiba Semiconductor and Storage

TPC6107(TE85L,F,M)

MOSFET P-CH 20V 4.5A VS-6

Toshiba Semiconductor and Storage

4,588 -
Datasheet U-MOSIV SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 2V, 4.5V 55mOhm @ 2.2A, 4.5V 1.2V @ 200µA 9.8 nC @ 5 V ±12V 680 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC8014(TE12L,Q,M) Toshiba Semiconductor and Storage

TPC8014(TE12L,Q,M)

MOSFET N-CH 30V 11A 8SOP

Toshiba Semiconductor and Storage

2,801 -
Datasheet - 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 14mOhm @ 5.5A, 10V 2.5V @ 1mA 39 nC @ 10 V ±20V 1860 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
TPC8018-H(TE12LQM) Toshiba Semiconductor and Storage

TPC8018-H(TE12LQM)

MOSFET N-CH 30V 18A 8SOP

Toshiba Semiconductor and Storage

6,240 -
Datasheet - 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 4.6mOhm @ 9A, 10V 2.3V @ 1mA 38 nC @ 10 V ±20V 2265 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
TPC8021-H(TE12LQ,M Toshiba Semiconductor and Storage

TPC8021-H(TE12LQ,M

MOSFET N-CH 30V 11A 8SOP

Toshiba Semiconductor and Storage

4,798 -
Datasheet - 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 17mOhm @ 5.5A, 10V 2.3V @ 1mA 11 nC @ 10 V ±20V 640 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.