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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK4A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK4A60D(STA4,Q,M)

MOSFET N-CH 600V 4A TO220SIS

Toshiba Semiconductor and Storage

5,662 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TPCC8003-H(TE12LQM Toshiba Semiconductor and Storage

TPCC8003-H(TE12LQM

MOSFET N-CH 30V 13A 8TSON

Toshiba Semiconductor and Storage

9,245 -
Datasheet U-MOSVI-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 16.9mOhm @ 6.5A, 10V 2.3V @ 200µA 17 nC @ 10 V ±20V 1300 pF @ 10 V - 700mW (Ta), 22W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8008(TE12L,QM) Toshiba Semiconductor and Storage

TPCC8008(TE12L,QM)

MOSFET N-CH 30V 25A 8TSON

Toshiba Semiconductor and Storage

3,239 -
Datasheet U-MOSIV 8-VDFN Exposed Pad Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta) 4.5V, 10V 6.8mOhm @ 12.5A, 10V 2.5V @ 1A 30 nC @ 10 V ±25V 1600 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
SSM3J108TU(TE85L) Toshiba Semiconductor and Storage

SSM3J108TU(TE85L)

MOSFET P-CH 20V 1.8A UFM

Toshiba Semiconductor and Storage

4,079 -
Datasheet U-MOSIII 3-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.8A (Ta) 1.8V, 4V 158mOhm @ 800mA, 4V 1V @ 1mA - ±8V 250 pF @ 10 V - 500mW (Ta) 150°C (TJ) - - Surface Mount UFM
TK40P03M1(T6RSS-Q) Toshiba Semiconductor and Storage

TK40P03M1(T6RSS-Q)

MOSFET N-CH 30V 40A DP

Toshiba Semiconductor and Storage

5,686 -
Datasheet U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 10.8mOhm @ 20A, 10V 2.3V @ 100µA 17.5 nC @ 10 V ±20V 1150 pF @ 10 V - - - - - Surface Mount DPAK
TK40P04M1(T6RSS-Q) Toshiba Semiconductor and Storage

TK40P04M1(T6RSS-Q)

MOSFET N-CH 40V 40A DP

Toshiba Semiconductor and Storage

6,191 -
Datasheet U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 40A (Ta) 4.5V, 10V 11mOhm @ 20A, 10V 2.3V @ 200µA 29 nC @ 10 V ±20V 1920 pF @ 10 V - 47W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4A60DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK4A60DA(STA4,Q,M)

MOSFET N-CH 600V 3.5A TO220SIS

Toshiba Semiconductor and Storage

3,900 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Ta) 10V 2.2Ohm @ 1.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - - 150°C (TJ) - - Through Hole TO-220SIS
TK10S04K3L(T6L1,NQ Toshiba Semiconductor and Storage

TK10S04K3L(T6L1,NQ

MOSFET N-CH 40V 10A DPAK

Toshiba Semiconductor and Storage

2,123 -
Datasheet U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 6V, 10V 28mOhm @ 5A, 10V 3V @ 1mA 10 nC @ 10 V ±20V 410 pF @ 10 V - 25W (Tc) 175°C (TJ) - - Surface Mount DPAK+
TK11A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK11A60D(STA4,Q,M)

MOSFET N-CH 600V 11A TO220SIS

Toshiba Semiconductor and Storage

6,995 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 650mOhm @ 5.5A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK15A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK15A60D(STA4,Q,M)

MOSFET N-CH 600V 15A TO220SIS

Toshiba Semiconductor and Storage

2,606 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 370mOhm @ 7.5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.