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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TPCC8104,L1Q(CM Toshiba Semiconductor and Storage

TPCC8104,L1Q(CM

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage

5,080 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TPCC8105,L1Q(CM Toshiba Semiconductor and Storage

TPCC8105,L1Q(CM

MOSFET P-CH 30V 23A 8TSON

Toshiba Semiconductor and Storage

2,514 -
Datasheet U-MOSVI 8-VDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 23A (Ta) 4.5V, 10V 7.8mOhm @ 11.5A, 10V 2V @ 500µA 76 nC @ 10 V +20V, -25V 3240 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8136.LQ Toshiba Semiconductor and Storage

TPCC8136.LQ

MOSFET P-CH 20V 9.4A 8TSON

Toshiba Semiconductor and Storage

3,328 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.8V, 4.5V 16mOhm @ 9.4A, 4.5V 1.2V @ 1mA 36 nC @ 5 V ±12V 2350 pF @ 10 V - 700mW (Ta), 18W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TK40J20D,S1F(O Toshiba Semiconductor and Storage

TK40J20D,S1F(O

MOSFET N-CH 200V 40A TO3P

Toshiba Semiconductor and Storage

7,100 -
Datasheet π-MOSVIII TO-3P-3, SC-65-3 Tray Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Ta) 10V 44mOhm @ 20A, 10V 3.5V @ 1mA 100 nC @ 10 V ±20V 4300 pF @ 100 V - 260W (Tc) 150°C - - Through Hole TO-3P(N)
TPCC8104,L1Q Toshiba Semiconductor and Storage

TPCC8104,L1Q

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage

7,515 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.1x3.1)
TK12J60W,S1VE(S Toshiba Semiconductor and Storage

TK12J60W,S1VE(S

MOSFET N-CH 600V 11.5A TO3P

Toshiba Semiconductor and Storage

6,276 -
Datasheet - TO-3P-3, SC-65-3 Tray Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 110W (Tc) 150°C - - Through Hole TO-3P(N)
TPCA8128,L1Q Toshiba Semiconductor and Storage

TPCA8128,L1Q

MOSFET P-CH 30V 34A 8SOP

Toshiba Semiconductor and Storage

6,835 -
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 34A (Ta) 4.5V, 10V 4.8mOhm @ 17A, 10V 2V @ 500µA 115 nC @ 10 V +20V, -25V 4800 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C - - Surface Mount 8-SOP Advance (5x5)
TK430A60F,S4X(S Toshiba Semiconductor and Storage

TK430A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

6,663 -
Datasheet U-MOSIX TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Ta) 10V 430mOhm @ 6.5A, 10V 4V @ 1.75mA 48 nC @ 10 V ±30V 1940 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK370A60F,S4X(S Toshiba Semiconductor and Storage

TK370A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

4,152 -
Datasheet U-MOSIX TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 370mOhm @ 7.5A, 10V 4V @ 2.04mA 55 nC @ 10 V ±30V 2200 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
SSM3K15CT,L3F Toshiba Semiconductor and Storage

SSM3K15CT,L3F

MOSFET N-CH 30V 100MA CST3

Toshiba Semiconductor and Storage

2,779 -
Datasheet - SC-101, SOT-883 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 7.8 pF @ 3 V - 100mW (Ta) 150°C - - Surface Mount CST3
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.