FETs, MOSFETs
Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DI0A35N06PGK-AQMOSFET, DFN1006-3, 60V, 0.35A, 1 |
7,134 | - |
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Datasheet | - | SC-101, SOT-883 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 350mA | 2.5V, 10V | 1.4Ohm @ 500mA, 10V | 1V @ 250µA | 1.9 nC @ 10 V | ±20V | 32 pF @ 25 V | - | 223mW | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DFN1006-3 |
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DI020P06PT-AQMOSFET, POWERQFN 3X3, -60V, -20A |
2,950 | - |
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Datasheet | - | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | - | - | 20A | - | - | - | - | - | - | - | 29.7W | - | - | - | Surface Mount | 8-QFN (3x3) |
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DI025N20PQMOSFET N , 200V 25A 48mW |
8,734 | - |
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Datasheet | - | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 25A (Tc) | 10V | 48mOhm @ 20A, 10V | 4V @ 250µA | 28 nC @ 10 V | ±20V | 1650 pF @ 100 V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-QFN (5x6) |
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DI110N06D2MOSFET, D2PAK, 60V, 110A, 150C, |
5,287 | - |
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Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 250µA | 75 nC @ 10 V | ±20V | 4597 pF @ 25 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AB |
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DIW065SIC080SIC MOSFET, TO-247-3L, N, 36A, 6 |
7,072 | - |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 36A (Tc) | 18V | 80mOhm @ 15A, 18V | 4V @ 5mA | 75 nC @ 20 V | +18V, -5V | 1480 pF @ 600 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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DIW065SIC049SIC MOSFET, TO-247-3L, N, 60A, 6 |
6,490 | - |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 60A (Tc) | 18V | 49mOhm @ 30A, 18V | 4V @ 10mA | 128 nC @ 20 V | +18V, -5V | 2612 pF @ 600 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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DIF120SIC053SIC MOSFET, TO-247-4L, N, 65A, 1 |
5,228 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 53mOhm @ 33A, 18V | 4V @ 9.5mA | 121 nC @ 15 V | +18V, -4V | 2070 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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DIF065SIC030SIC MOSFET, TO-247-4L, N, 105A, |
2,722 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 105A (Tc) | 18V | 30mOhm @ 75A, 18V | 4V @ 23.5mA | 145 nC @ 18 V | +18V, -4V | 3300 pF @ 600 V | - | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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DIW170SIC049SIC MOSFET, TO-247-3L, N, 67A, 1 |
6,892 | - |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1700 V | 67A (Tc) | 18V | 49mOhm @ 40A, 18V | 4V @ 15mA | 179 nC @ 18 V | +18V, -4V | 3046 pF @ 1000 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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DIW120SIC028SIC MOSFET, TO-247-3L, N, 118A, |
8,239 | - |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 118A (Tc) | 20V | 28mOhm @ 80A, 20V | 4V @ 25mA | 373 nC @ 20 V | +20V, -5V | 5691 pF @ 1000 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
FETs, MOSFETs FAQ
Common questions about filtering, comparing and sourcing FETs, MOSFETs components.
How can I narrow the FETs, MOSFETs selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.
