Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
APT10SCD120K DIODE SIL CARB 1.2KV 10A TO220 Microsemi Corporation	297	-	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-220-2	-
JANTX1N6640US DIODE GEN PURP 50V 300MA D-5D MACOM Technology Solutions	181	-	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Discontinued at Digi-Key	Standard	50 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	90 µA @ 50 V	-	Military	MIL-PRF-19500/578 & /609	Surface Mount	D-5D	-65°C ~ 175°C
STPSC20H12G2-TR DIODE SIL CARB 1.2KV 20A D2PAK STMicroelectronics	1,000	-	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 1200 V	1650pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK HV	-40°C ~ 175°C
FFSH15120A DIODE SIL CARB 1.2KV 26A TO247-2 onsemi	229	-	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	26A	1.75 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	936pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH3065ADN-F155 DIODE SIL CARB 650V 23A TO247-3 onsemi	447	-	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	23A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	887pF @ 1V, 100kHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
LSIC2SD065A20A DIODE SIL CARB 650V 45A TO220-2L Littelfuse Inc.	873	-	RFQ	Datasheet	Gen2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	45A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	960pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
NDSH30120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	326	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	38A	1.75 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1961pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
STPSC20H12DY DIODE SIL CARB 1.2KV 20A TO220AC STMicroelectronics	970	-	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 1200 V	1650pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
IDH15S120AKSA1 DIODE SIL CARB 1.2KV 15A TO220-2 Infineon Technologies	4,906	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	15A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	360 µA @ 1200 V	750pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
ADC4D10120D DIODE SIL SIC 1200V 9A TO247-3 Analog Power Inc.	550	-	RFQ	Datasheet	WBG	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	9A	1.8 V @ 2 A	No Recovery Time > 500mA (Io)	-	2 µA @ 1200 V	6.3pF @ 0V, 100kHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
RURU15080 DIODE AVALANCHE 800V 150A TO218 Harris Corporation	301	-	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	800 V	150A	1.9 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	500 µA @ 800 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
FFSH4065A DIODE SIL CARB 650V 48A TO247-2 onsemi	551	-	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	48A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1989pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
IV1D12015T2 DIODE SIL CARB 1.2KV 44A TO247-2 Inventchip	120	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	44A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1200 V	888pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
PCDP20120G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,993	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 1200 V	1040pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
FFSH20120A-F155 DIODE SIL CARB 1.2KV 30A TO247-2 onsemi	579	-	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	30A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
PCDH20120G1_T0_00601 1200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	1,500	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 1200 V	1023pF @ 1V, 1MHz	-	-	Through Hole	TO-247AD-2	-55°C ~ 175°C
PCDB20120G1_R2_00001 1200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,365	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 1200 V	1040pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C
NDSH40120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	421	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	46A	1.75 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	2840pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH30120A-F155 DIODE SIL CARB 1.2KV 46A TO247-2 onsemi	353	-	RFQ	Datasheet	-	TO-247-2	Tray	Active	SiC (Silicon Carbide) Schottky	1200 V	46A	1.75 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1740pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
IV1D12020T2 DIODE SIL CARB 1.2KV 54A TO247-2 Inventchip	110	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	54A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 1200 V	1114pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C

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Single Diodes FAQ

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Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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