FET, MOSFET Arrays

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SSM6L820R,LF MOSFET N/P-CH 30V/20V 4A 6TSOPF Toshiba Semiconductor and Storage	5,875	-	RFQ	Datasheet	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	N and P-Channel	-	30V, 20V	4A (Ta)	39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V	1V @ 1mA, 1.2V @ 1mA	3.2nC @ 4.5V, 6.7nC @ 4.5V	310pF @ 15V, 480pF @ 10V	1.4W (Ta)	150°C	-	-	Surface Mount	6-TSOP-F
SSM14N956L,EFF MOSFET 2N-CH 12V 20A TCSPED Toshiba Semiconductor and Storage	8,479	-	RFQ	Datasheet	-	14-SMD, No Lead	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel	-	12V	20A (Ta)	1.35mOhm @ 10A, 4.5V	1.4V @ 1.57mA	76nC @ 4V	-	1.33W (Ta)	150°C	-	-	Surface Mount	TCSPED-302701
SSM10N961L,ELF MOSFET 2N-CH 30V 9A TCSPAG Toshiba Semiconductor and Storage	8,885	-	RFQ	Datasheet	-	10-XFLGA, CSP	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	30V	9A (Ta)	-	2.3V @ 250µA	17.3nC @ 10V	-	880mW (Ta)	150°C	-	-	Surface Mount	TCSPAG-341501
SSM6N7002BFE,LM MOSFET 2N-CH 60V 0.2A ES6 Toshiba Semiconductor and Storage	4,716	-	RFQ	Datasheet	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	200mA	2.1Ohm @ 500mA, 10V	3.1V @ 250µA	-	17pF @ 25V	150mW	150°C (TJ)	-	-	Surface Mount	ES6
SSM6P69NU,LF MOSFET 2P-CH 20V 4A 6DFN Toshiba Semiconductor and Storage	2	-	RFQ	Datasheet	-	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate, 1.8V Drive	20V	4A (Ta)	45mOhm @ 3.5A, 10V	1.2V @ 1mA	6.74nC @ 4.5V	480pF @ 10V	1W (Ta)	150°C	-	-	Surface Mount	6-µDFN (2x2)
SSM6N68NU,LF MOSFET 2N-CH 30V 4A 6DFN Toshiba Semiconductor and Storage	16	-	RFQ	Datasheet	-	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate, 1.8V Drive	30V	4A (Ta)	84mOhm @ 2A, 4.5V	1V @ 1mA	1.8nC @ 4.5V	129pF @ 15V	2W (Ta)	150°C	-	-	Surface Mount	6-µDFN (2x2)
SSM6N35FE,LM MOSFET 2N-CH 20V 0.18A ES6 Toshiba Semiconductor and Storage	2,959	-	RFQ	Datasheet	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	180mA	3Ohm @ 50mA, 4V	1V @ 1mA	-	9.5pF @ 3V	150mW	150°C (TJ)	-	-	Surface Mount	ES6
SSM6N62TU,LXHF MOSFET 2N-CH 20V 0.8A UF6 Toshiba Semiconductor and Storage	7,941	-	RFQ	Datasheet	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate, 1.2V Drive	20V	800mA (Ta)	85mOhm @ 800mA, 4.5V	1V @ 1mA	2nC @ 4.5V	177pF @ 10V	500mW (Ta)	150°C	Automotive	AEC-Q101	Surface Mount	UF6
SSM6N951L,EFF MOSFET 2N-CH 12V 8A 6TCSPA Toshiba Semiconductor and Storage	3,387	-	RFQ	Datasheet	-	6-SMD, No Lead	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Drain	-	12V	8A	5.1mOhm @ 8A, 4.5V	-	-	-	-	-	-	-	Surface Mount	6-TCSPA (2.14x1.67)
SSM6N15AFE,LM MOSFET 2N-CH 30V 0.1A ES6 Toshiba Semiconductor and Storage	10	-	RFQ	Datasheet	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	4Ohm @ 10mA, 4V	1.5V @ 100µA	-	13.5pF @ 3V	150mW	150°C (TJ)	-	-	Surface Mount	ES6

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FET, MOSFET Arrays FAQ

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.