FETs, MOSFETs
Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G3R60MT07D750V 60M TO-247-3 G3R SIC MOSFET |
1,839 | - |
|
Datasheet | G3R™ | TO-247-3 | Tube | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | - | - | Through Hole | TO-247-3 |
|
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G3R60MT07K750V 60M TO-247-4 G3R SIC MOSFET |
1,151 | - |
|
Datasheet | G3R™ | TO-247-4 | Tube | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | - | - | Through Hole | TO-247-4 |
|
G3R350MT12J-TR1200V 350M TO-263-7 G3R SIC MOSF |
623 | - |
|
Datasheet | G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 15V, 18V | 395mOhm @ 4A, 18V | 2.7V @ 2mA | 10 nC @ 15 V | +22V, -10V | 331 pF @ 800 V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
G2R1000MT17J-TR1700V 1000M TO-263-7 G2R SIC MOS |
606 | - |
|
Datasheet | G2R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | 11 nC @ 20 V | +20V, -5V | 139 pF @ 1000 V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
G3F135MT12J-TR1200V 135M TO-263-7 G3F SIC MOSF |
800 | - |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 18A (Tc) | 18V | 180mOhm @ 8A, 18V | 4.3V @ 5mA | 27 nC @ 18 V | +22V, -10V | 575 pF @ 800 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F60MT06J-TR650V 55M TO-263-7 G3F SIC MOSFET |
800 | - |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 44A (Tc) | 15V, 18V | 75mOhm @ 15A, 18V | 4.3V @ 7mA | 45 nC @ 18 V | +22V, -10V | 1322 pF @ 400 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
G3F75MT12J-TR1200V 75M TO-263-7 G3F SIC MOSFE |
800 | - |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 31A (Tc) | 18V | 100mOhm @ 12A, 18V | 4.3V @ 9mA | 48 nC @ 18 V | +22V, -10V | 988 pF @ 800 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F75MT12K1200V 75M TO-247-4 G3F SIC MOSFE |
600 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 30A (Tc) | 18V | 100mOhm @ 12A, 18V | 4.3V @ 9mA | 48 nC @ 18 V | +22V, -10V | 988 pF @ 800 V | - | 127W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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G3F60MT06D650V 55M TO-247-3 G3F SIC MOSFET |
600 | - |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
G3F60MT06K650V 55M TO-247-4 G3F SIC MOSFET |
600 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 42A (Tc) | 15V, 18V | 75mOhm @ 15A, 18V | 4.3V @ 7mA | 45 nC @ 18 V | +22V, -10V | 1322 pF @ 400 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
FETs, MOSFETs FAQ
Common questions about filtering, comparing and sourcing FETs, MOSFETs components.
How can I narrow the FETs, MOSFETs selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.