FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters

Stock & Datasheets Review availability and technical references

RFQ & BOM Support Send your target MPN, quantity or BOM

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
G3F45MT06J-TR 650V 40M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor	800	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	56A (Tc)	15V, 18V	54mOhm @ 20A, 18V	4.3V @ 8mA	55 nC @ 18 V	+22V, -10V	1640 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
G3F65MT12J-TR 1200V 65M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	37A (Tc)	18V	86mOhm @ 15A, 18V	4.3V @ 10mA	55 nC @ 18 V	+22V, -10V	1298 pF @ 800 V	-	171W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
G3F65MT12K 1200V 65M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	600	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	35A (Tc)	18V	86mOhm @ 15A, 18V	4.3V @ 10mA	55 nC @ 18 V	+22V, -10V	1298 pF @ 800 V	-	153W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
G3F45MT06D 650V 40M TO-247-3 G3F SIC MOSFET GeneSiC Semiconductor	600	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-3
G3F33MT06J-TR 650V 27M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor	800	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	80A (Tc)	15V, 18V	38mOhm @ 26A, 18V	4.3V @ 12mA	81 nC @ 18 V	+22V, -10V	2394 pF @ 400 V	-	261W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
G3F45MT06K 650V 40M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor	600	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	52A (Tc)	15V, 18V	54mOhm @ 20A, 18V	4.3V @ 8mA	55 nC @ 18 V	+22V, -10V	1640 pF @ 400 V	-	167W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
G3F40MT12J-TR 1200V 40M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	59A (Tc)	18V	53mOhm @ 20A, 18V	4.3V @ 16mA	86 nC @ 18 V	+22V, -10V	2023 pF @ 800 V	-	270W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
G3F40MT12K 1200V 40M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	552	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	55A (Tc)	18V	53mOhm @ 20A, 18V	4.3V @ 16mA	86 nC @ 18 V	+22V, -10V	2023 pF @ 800 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
G3F33MT06K 650V 27M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor	600	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	74A (Tc)	15V, 18V	38mOhm @ 26A, 18V	4.3V @ 12mA	81 nC @ 18 V	+22V, -10V	2394 pF @ 400 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
G3R40MT12J-TR 1200V 40M TO-263-7 G3R SIC MOSFE GeneSiC Semiconductor	630	-	RFQ	Datasheet	G3R™, LoRing™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	66A (Tc)	15V, 18V	45mOhm @ 35A, 18V	2.7V @ 18mA	88 nC @ 15 V	+22V, -10V	2897 pF @ 800 V	-	330W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7

WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing

Send part number & quantity Request a Quote

Need sourcing assistance? Contact Sales

FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.