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FILTERED PRODUCT SELECTION

FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G3F34MT12J-TR GeneSiC Semiconductor

G3F34MT12J-TR

1200V 34M TO-263-7 G3F SIC MOSFE

GeneSiC Semiconductor

800 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 68A (Tc) 18V 45mOhm @ 26A, 18V 4.3V @ 18mA 104 nC @ 18 V +22V, -10V 2418 pF @ 800 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F25MT06J-TR GeneSiC Semiconductor

G3F25MT06J-TR

650V 20M TO-263-7 G3F SIC MOSFET

GeneSiC Semiconductor

800 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 108A (Tc) 15V, 18V 27.5mOhm @ 35A, 18V 4.3V @ 15mA 108 nC @ 18 V +22V, -10V 2939 pF @ 400 V - 343W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F34MT12K GeneSiC Semiconductor

G3F34MT12K

1200V 34M TO-247-4 G3F SIC MOSFE

GeneSiC Semiconductor

600 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 63A (Tc) 18V 45mOhm @ 26A, 18V 4.3V @ 18mA 104 nC @ 18 V +22V, -10V 2418 pF @ 800 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
G3F25MT06K GeneSiC Semiconductor

G3F25MT06K

650V 20M TO-247-4 G3F SIC MOSFET

GeneSiC Semiconductor

595 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 100A (Tc) 15V, 18V 27.5mOhm @ 35A, 18V 4.3V @ 15mA 108 nC @ 18 V +22V, -10V 2939 pF @ 400 V - 294W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
G3F25MT12J-TR GeneSiC Semiconductor

G3F25MT12J-TR

1200V 25M TO-263-7 G3F SIC MOSFE

GeneSiC Semiconductor

800 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 87A (Tc) 18V 34mOhm @ 34A, 18V 4.3V @ 24mA 128 nC @ 18 V +22V, -10V 3325 pF @ 800 V - 362W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F25MT12K GeneSiC Semiconductor

G3F25MT12K

1200V 25M TO-247-4 G3F SIC MOSFE

GeneSiC Semiconductor

595 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
G3F20MT12J-TR GeneSiC Semiconductor

G3F20MT12J-TR

1200V 20M TO-263-7 G3F SIC MOSFE

GeneSiC Semiconductor

800 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 108A (Tc) 18V 26.5mOhm @ 40A, 18V 4.3V @ 30mA 176 nC @ 18 V +22V, -10V 4317 pF @ 800 V - 448W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F20MT12K GeneSiC Semiconductor

G3F20MT12K

1200V 20M TO-247-4 G3F SIC MOSFE

GeneSiC Semiconductor

595 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V - - - - - - - - - - - - Through Hole TO-247-4
G3F18MT12J-TR GeneSiC Semiconductor

G3F18MT12J-TR

1200V 18M TO-263-7 G3F SIC MOSFE

GeneSiC Semiconductor

800 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 122A (Tc) 18V 25mOhm @ 45A, 18V 4.3V @ 35mA 212 nC @ 18 V +22V, -10V 4962 pF @ 800 V - 526W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
G3F18MT12K GeneSiC Semiconductor

G3F18MT12K

1200V 18M TO-247-4 G3F SIC MOSFE

GeneSiC Semiconductor

595 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.