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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G3F45MT06L-TR GeneSiC Semiconductor

G3F45MT06L-TR

650V 40M TO-LL G3F SIC MOSFET

GeneSiC Semiconductor

8,412 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 61A (Tc) 15V, 18V 54mOhm @ 20A, 18V 4.3V @ 8mA 55 nC @ 18 V +22V, -10V 1640 pF @ 400 V - 227W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TOLL
G3F33MT06L-TR GeneSiC Semiconductor

G3F33MT06L-TR

650V 27M TO-LL G3F SIC MOSFET

GeneSiC Semiconductor

5,791 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 90A (Tc) 15V, 18V 38mOhm @ 26A, 18V 4.3V @ 12mA 81 nC @ 18 V +22V, -10V 2394 pF @ 400 V - 333W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TOLL
G3F25MT06L-TR GeneSiC Semiconductor

G3F25MT06L-TR

650V 20M TO-LL G3F SIC MOSFET

GeneSiC Semiconductor

8,600 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 125A (Tc) 15V, 18V 27.5mOhm @ 35A, 18V 4.3V @ 15mA 108 nC @ 18 V +22V, -10V 2939 pF @ 400 V - 455W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TOLL
G3R350MT12J GeneSiC Semiconductor

G3R350MT12J

SIC MOSFET N-CH 11A TO263-7

GeneSiC Semiconductor

6,745 -
Datasheet G3R™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 11A (Tc) 15V 420mOhm @ 4A, 15V 2.69V @ 2mA 12 nC @ 15 V ±15V 334 pF @ 800 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
GA03JT12-247 GeneSiC Semiconductor

GA03JT12-247

TRANS SJT 1200V 3A TO247AB

GeneSiC Semiconductor

5,546 -
Datasheet - TO-247-3 Tube Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 3A (Tc) (95°C) - 460mOhm @ 3A - - - - - 15W (Tc) 175°C (TJ) - - Through Hole TO-247AB
GA05JT12-263 GeneSiC Semiconductor

GA05JT12-263

TRANS SJT 1200V 15A D2PAK

GeneSiC Semiconductor

3,277 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 15A (Tc) - - - - - - - 106W (Tc) 175°C (TJ) - - Surface Mount TO-263-7
GA05JT12-247 GeneSiC Semiconductor

GA05JT12-247

TRANS SJT 1200V 5A TO247AB

GeneSiC Semiconductor

6,647 -
Datasheet - TO-247-3 Tube Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 5A (Tc) - 280mOhm @ 5A - - - - - 106W (Tc) 175°C (TJ) - - Through Hole TO-247AB
GA06JT12-247 GeneSiC Semiconductor

GA06JT12-247

TRANS SJT 1200V 6A TO247AB

GeneSiC Semiconductor

3,911 -
Datasheet - TO-247-3 Tube Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 6A (Tc) (90°C) - 220mOhm @ 6A - - - - - - 175°C (TJ) - - Through Hole TO-247AB
G3R160MT17J GeneSiC Semiconductor

G3R160MT17J

SIC MOSFET N-CH 18A TO263-7

GeneSiC Semiconductor

6,975 -
Datasheet G3R™, LoRing™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 18A (Tc) 15V 224mOhm @ 10A, 15V 2.7V @ 5mA 29 nC @ 15 V ±15V 854 pF @ 1000 V - 187W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
G3R75MT12J GeneSiC Semiconductor

G3R75MT12J

SIC MOSFET N-CH 42A TO263-7

GeneSiC Semiconductor

2 -
Datasheet G3R™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 42A (Tc) 15V 90mOhm @ 20A, 15V 2.69V @ 7.5mA 54 nC @ 15 V ±15V 1560 pF @ 800 V - 224W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.