FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters

Stock & Datasheets Review availability and technical references

RFQ & BOM Support Send your target MPN, quantity or BOM

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPSA70R900P7SAKMA1 MOSFET N-CH 700V 6A TO251-3 Infineon Technologies	9,029	-	RFQ	Datasheet	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	700 V	6A (Tc)	10V	900mOhm @ 1.1A, 10V	3.5V @ 60µA	6.8 nC @ 400 V	±16V	211 pF @ 400 V	-	30.5W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3
BSP321PL6327 P-CHANNEL MOSFET Infineon Technologies	37,989	-	RFQ	Datasheet	SIPMOS®	TO-261-4, TO-261AA	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	100 V	980mA (Tc)	10V	900mOhm @ 980mA, 10V	4V @ 380µA	12 nC @ 10 V	±20V	319 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-4-21
IPU60R2K0C6AKMA1 MOSFET N-CH 600V 2.4A TO251-3 Infineon Technologies	5,396	-	RFQ	Datasheet	CoolMOS™	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	2.4A (Tc)	10V	2Ohm @ 760mA, 10V	3.5V @ 60µA	6.7 nC @ 10 V	±20V	140 pF @ 100 V	-	22.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3
BSC889N03MSG N-CHANNEL POWER MOSFET Infineon Technologies	15,000	-	RFQ	Datasheet	OptiMOS™ 3	8-PowerTDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12A (Ta), 44A (Tc)	4.5V, 10V	9.1mOhm @ 30A, 10V	2V @ 250µA	20 nC @ 10 V	±20V	1500 pF @ 15 V	-	2.5W (Ta), 28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8
IPS65R1K0CEAKMA1 MOSFET N-CH 650V 4.3A TO251 Infineon Technologies	7,426	-	RFQ	Datasheet	CoolMOS™ CE	TO-251-3 Stub Leads, IPAK	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	650 V	4.3A (Tc)	10V	1Ohm @ 1.5A, 10V	3.5V @ 200µA	15.3 nC @ 10 V	±20V	328 pF @ 100 V	-	37W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	TO-251
BSC091N03MSCGATMA1 POWER FIELD-EFFECT TRANSISTOR, 1 Infineon Technologies	15,000	-	RFQ	Datasheet	SIPMOS®	8-PowerTDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12A (Ta), 44A (Tc)	4.5V, 10V	9.1mOhm @ 30A, 10V	2V @ 250µA	20 nC @ 10 V	±20V	1500 pF @ 15 V	-	2.5W (Ta), 28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-6
BSO065N03MSG SMALL SIGNAL N-CHANNEL MOSFET Infineon Technologies	2,500	-	RFQ	Datasheet	OptiMOS™ 3	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	13A (Ta)	4.5V, 10V	6.5mOhm @ 16A, 10V	2V @ 250µA	40 nC @ 10 V	±20V	3100 pF @ 15 V	-	1.56W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-8
BSP324L6327 N-CHANNEL POWER MOSFET Infineon Technologies	80,249	-	RFQ	Datasheet	SIPMOS®	TO-261-4, TO-261AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	400 V	170mA (Ta)	4.5V, 10V	25Ohm @ 170mA, 10V	2.3V @ 94µA	5.9 nC @ 10 V	±20V	154 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-4-21
BSP603S2LNT N-CHANNEL POWER MOSFET Infineon Technologies	30,123	-	RFQ	Datasheet	OptiMOS™	TO-261-4, TO-261AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	55 V	5.2A (Ta)	4.5V, 10V	33mOhm @ 2.6A, 10V	2V @ 50µA	42 nC @ 10 V	±20V	1390 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-4-21
IPS60R1K0CEAKMA1 CONSUMER Infineon Technologies	5,471	-	RFQ	Datasheet	CoolMOS™ CE	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	6.8A (Tj)	10V	1Ohm @ 1.5A, 10V	3.5V @ 130µA	13 nC @ 10 V	±20V	280 pF @ 100 V	-	61W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3

WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing

Send part number & quantity Request a Quote

Need sourcing assistance? Contact Sales

FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.