FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters

Stock & Datasheets Review availability and technical references

RFQ & BOM Support Send your target MPN, quantity or BOM

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IMT40R011M2HXTMA1 SIC-MOS Infineon Technologies	1,927	-	RFQ	Datasheet	CoolSiC™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	400 V	13.4A (Ta), 144A (Tc)	15V, 18V	14.4mOhm @ 37.1A, 18V	5.6V @ 13.3mA	85 nC @ 18 V	+23V, -7V	3770 pF @ 200 V	-	3.8W (Ta), 429W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOF-8-2
IMZC120R017M2HXKSA1 IMZC120R017M2HXKSA1 Infineon Technologies	240	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	97A (Tc)	15V, 18V	17mOhm @ 40A, 18V	5.1V @ 12.7mA	89 nC @ 18 V	+23V, -7V	2910 pF @ 800 V	-	382W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
AIMBG120R030M1XTMA1 SIC_DISCRETE Infineon Technologies	1,708	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	70A (Tc)	18V, 20V	38mOhm @ 27A, 20V	5.1V @ 8.6mA	57 nC @ 20 V	+23V, -5V	1738 pF @ 800 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-12
AIMZA75R020M1HXKSA1 AUTOMOTIVE_SICMOS Infineon Technologies	190	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	75A (Tj)	15V, 20V	18mOhm @ 32.5A, 20V	5.6V @ 11.7mA	67 nC @ 18 V	+23V, -5V	2217 pF @ 500 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4
IMBG65R015M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	1,000	-	RFQ	Datasheet	CoolSiC™ Gen 2	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	115A (Tc)	15V, 20V	18mOhm @ 64.2A, 18V	5.6V @ 13mA	79 nC @ 18 V	+23V, -7V	2792 pF @ 400 V	-	416W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12
IPQC60R010S7XTMA1 MOSFET Infineon Technologies	750	-	RFQ	Datasheet	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	12V	10mOhm @ 50A, 12V	4.5V @ 3.08mA	318 nC @ 12 V	±20V	-	-	694W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22
IMZA75R016M1HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	210	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	89A (Tj)	15V, 20V	15mOhm @ 41.5A, 20V	5.6V @ 14.9mA	81 nC @ 18 V	+23V, -5V	2869 pF @ 500 V	-	319W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4
AIMZA75R016M1HXKSA1 SICFET N-CH 750V 89A PG-TO247-4 Infineon Technologies	213	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	89A (Tc)	15V, 20V	22mOhm @ 41.5A, 18V	5.6V @ 14.9mA	81 nC @ 18 V	+23V, -5V	2869 pF @ 500 V	-	319W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4
IMW65R010M2HXKSA1 IMW65R010M2HXKSA1 Infineon Technologies	396	-	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	130A (Tc)	15V, 20V	9.1mOhm @ 92.1A, 20V	5.6V @ 18.7mA	112 nC @ 18 V	+23V, -7V	4001 pF @ 400 V	-	440W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40
IMZA65R010M2HXKSA1 IMZA65R010M2HXKSA1 Infineon Technologies	400	-	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	144A (Tc)	15V, 20V	9.1mOhm @ 92.1A, 20V	5.6V @ 18.7mA	112 nC @ 18 V	+23V, -7V	4001 pF @ 400 V	-	440W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8

WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing

Send part number & quantity Request a Quote

Need sourcing assistance? Contact Sales

FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.