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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AIMBG75R027M1HXTMA1 Infineon Technologies

AIMBG75R027M1HXTMA1

AIMBG75R027M1HXTMA1

Infineon Technologies

1,183 -
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 64A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +23V, -5V 1668 pF @ 500 V - 273W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
IMW65R026M2HXKSA1 Infineon Technologies

IMW65R026M2HXKSA1

IMW65R026M2HXKSA1

Infineon Technologies

390 -
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 64A (Tc) 15V, 20V 24mOhm @ 34.5A, 20V 5.6V @ 7mA 42 nC @ 18 V +23V, -7V 1499 pF @ 400 V - 227W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
AIMDQ75R027M1HXUMA1 Infineon Technologies

AIMDQ75R027M1HXUMA1

AIMDQ75R027M1HXUMA1

Infineon Technologies

671 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 64A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +23V, -5V 1668 pF @ 500 V - 273W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IPDQ60R017S7AXTMA1 Infineon Technologies

IPDQ60R017S7AXTMA1

MOSFET

Infineon Technologies

750 -
Datasheet CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.89mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
IMZC120R026M2HXKSA1 Infineon Technologies

IMZC120R026M2HXKSA1

IMZC120R026M2HXKSA1

Infineon Technologies

215 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 69A (Tc) 15V, 18V 25mOhm @ 27A, 18V 5.1V @ 8.6mA 60 nC @ 18 V +23V, -7V 1990 pF @ 800 V - 289W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
IMZA75R027M1HXKSA1 Infineon Technologies

IMZA75R027M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

239 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 60A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +23V, -5V 1668 pF @ 500 V - 234W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
IPZA60R016CM8XKSA1 Infineon Technologies

IPZA60R016CM8XKSA1

IPZA60R016CM8XKSA1

Infineon Technologies

391 -
Datasheet CoolMOS™ TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 123A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 521W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-U02
GS66502B-MR Infineon Technologies Canada Inc.

GS66502B-MR

GS66502B-MR

Infineon Technologies Canada Inc.

208 -
Datasheet - 3-SMD, No Lead Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 7.5A (Tc) 6V 260mOhm @ 2.25A, 6V 2.6V @ 1.75mA 1.6 nC @ 6 V +7V, -10V 60 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
AIMBG120R060M1XTMA1 Infineon Technologies

AIMBG120R060M1XTMA1

SIC_DISCRETE

Infineon Technologies

959 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 38A (Tc) 18V, 20V 75mOhm @ 13A, 20V 5.1V @ 4.3mA 32 nC @ 20 V +23V, -5V 880 pF @ 800 V - 202W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-12
IMTA65R020M2HXTMA1 Infineon Technologies

IMTA65R020M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

371 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.