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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IMW65R020M2HXKSA1 Infineon Technologies

IMW65R020M2HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

163 -
Datasheet CoolSiC™ Gen 2 TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 83A (Tc) 15V, 20V 18mOhm @ 46.9A, 20V 5.6V @ 9.5mA 57 nC @ 18 V +23V, -7V 2038 pF @ 400 V - 273W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
IMBG40R011M2HXTMA1 Infineon Technologies

IMBG40R011M2HXTMA1

SIC-MOS

Infineon Technologies

1,000 -
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 13.4A (Ta), 133A (Tc) 15V, 18V 14.4mOhm @ 37.1A, 18V 5.6V @ 13.3mA 85 nC @ 18 V +23V, -7V 3770 pF @ 200 V - 3.8W (Ta), 429W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
AIMZA75R027M1HXKSA1 Infineon Technologies

AIMZA75R027M1HXKSA1

IGBT

Infineon Technologies

216 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 60A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +23V, -5V 1668 pF @ 500 V - 234W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
IPDQ60R020CFD7XTMA1 Infineon Technologies

IPDQ60R020CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

750 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 112A (Tc) 10V 20mOhm @ 42.4A, 10V 4.5V @ 2.12mA 186 nC @ 10 V ±20V 7395 pF @ 400 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
IMZC120R022M2HXKSA1 Infineon Technologies

IMZC120R022M2HXKSA1

IMZC120R022M2HXKSA1

Infineon Technologies

240 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 80A (Tc) 15V, 18V 22mOhm @ 32A, 18V 5.1V @ 10.1mA 71 nC @ 18 V +23V, -7V 2330 pF @ 800 V - 329W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
IMDQ75R020M1HXUMA1 Infineon Technologies

IMDQ75R020M1HXUMA1

IMDQ75R020M1HXUMA1

Infineon Technologies

750 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 81A (Tj) 15V, 20V 18mOhm @ 32.5A, 20V 5.6V @ 11.7mA 67 nC @ 18 V +20V, -2V 2217 pF @ 500 V - 326W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-22-1
AIMBG75R020M1HXTMA1 Infineon Technologies

AIMBG75R020M1HXTMA1

AIMBG75R020M1HXTMA1

Infineon Technologies

424 -
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 81A (Tj) 15V, 20V 18mOhm @ 34.1A, 20V 5.6V @ 12.2mA 70 nC @ 18 V +23V, -5V 2326 pF @ 500 V - 326W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
AIMDQ75R020M1HXUMA1 Infineon Technologies

AIMDQ75R020M1HXUMA1

AIMDQ75R020M1HXUMA1

Infineon Technologies

670 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 81A (Tj) 15V, 20V 18mOhm @ 32.5A, 20V 5.6V @ 11.7mA 67 nC @ 18 V +23V, -5V 2217 pF @ 500 V - 326W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IMZA75R020M1HXKSA1 Infineon Technologies

IMZA75R020M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

237 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 75A (Tj) 15V, 20V 18mOhm @ 32.5A, 20V 5.6V @ 11.7mA 67 nC @ 18 V +23V, -5V 2217 pF @ 500 V - 278W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
AIMZHN120R040M1TXKSA1 Infineon Technologies

AIMZHN120R040M1TXKSA1

SIC_DISCRETE

Infineon Technologies

240 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 18V, 20V 50mOhm @ 20A, 20V 5.1V @ 6.4mA 43 nC @ 20 V +23V, -5V 1264 pF @ 800 V - 268W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.