FETs, MOSFETs
Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AIMBG120R020M1XTMA1SIC_DISCRETE |
864 | - |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 104A (Tc) | 18V, 20V | 25mOhm @ 43A, 20V | 5.1V @ 15mA | 82 nC @ 20 V | +23V, -5V | 2667 pF @ 800 V | - | 468W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-12 |
|
IMZC120R012M2HXKSA1IMZC120R012M2HXKSA1 |
215 | - |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 129A (Tc) | 15V, 18V | 12mOhm @ 57A, 18V | 5.1V @ 17.8mA | 124 nC @ 18 V | +23V, -7V | 4050 pF @ 800 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
AIMZA75R008M1HXKSA1AUTOMOTIVE_SICMOS |
240 | - |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 163A (Tc) | 15V, 20V | 7.2mOhm @ 90.3A, 20V | 5.6V @ 32.4mA | 178 nC @ 18 V | +23V, -5V | 6137 pF @ 500 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-U02 |
|
IMZA75R008M1HXKSA1SILICON CARBIDE MOSFET |
240 | - |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 163A (Tc) | 15V, 20V | 7.2mOhm @ 90.3A, 20V | 5.6V @ 32.4mA | 178 nC @ 500 V | +23V, -5V | 6137 pF @ 500 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-U02 |
|
IPD030N03LF2SATMA1MOSFET N-CH 30V 160A DPAK |
2,000 | - |
|
Datasheet | StrongIRFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 99A (Tc) | 4.5V, 10V | 3.05mOhm @ 60A, 10V | 2.35V @ 40µA | 50 nC @ 10 V | ±20V | 2200 pF @ 15 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-34 |
|
DF17MR12W1M1HFB68BPSA1LOW POWER EASY |
33 | - |
|
Datasheet | EasyPACK™ | Module | Tray | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 45A (Tj) | 15V, 18V | 16.2mOhm @ 50A, 18V | 5.15V @ 20mA | 149 nC @ 18 V | +20V, -7V | 4400 pF @ 800 V | - | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
BSS119NH7796SMALL SIGNAL N-CHANNEL MOSFET |
10,000 | - |
|
Datasheet | OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 2.3V @ 13µA | 0.6 nC @ 10 V | ±20V | 20.9 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23-3-5 |
|
BSD214SNL6327SMALL SIGNAL N-CHANNEL MOSFET |
22,000 | - |
|
Datasheet | OptiMOS™ 2 | 6-VSSOP, SC-88, SOT-363 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8 nC @ 5 V | ±12V | 143 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT363-6-6 |
|
IRF8736PBFMOSFET N-CH 30V 18A 8SO |
4,709 | - |
|
Datasheet | HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 4.8mOhm @ 18A, 10V | 2.35V @ 50µA | 26 nC @ 4.5 V | ±20V | 2315 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
BSS119L6433SMALL SIGNAL N-CHANNEL MOSFET |
86,725 | - |
|
Datasheet | SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 2.3V @ 50µA | 2.5 nC @ 10 V | ±20V | 78 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
FETs, MOSFETs FAQ
Common questions about filtering, comparing and sourcing FETs, MOSFETs components.
How can I narrow the FETs, MOSFETs selection?
Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.
Should I confirm the datasheet before selecting a part?
Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.
Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?
Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.
Do you support BOM, shortage or alternative-part requirements?
Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.