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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IMZA75R040M1HXKSA1 Infineon Technologies

IMZA75R040M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

235 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 44A (Tj) 15V, 20V 37mOhm @ 16.6A, 20V 5.6V @ 6mA 34 nC @ 18 V +23V, -5V 1135 pF @ 500 V - 185W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
AIMCQ120R060M1TXTMA1 Infineon Technologies

AIMCQ120R060M1TXTMA1

SIC_DISCRETE

Infineon Technologies

850 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 44A (Tc) 18V, 20V 75mOhm @ 13A, 20V 5.1V @ 4.3mA 32 nC @ 20 V +25V, -10V 880 pF @ 800 V - 259W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
AIMZH120R160M1TXKSA1 Infineon Technologies

AIMZH120R160M1TXKSA1

SIC_DISCRETE

Infineon Technologies

207 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V, 20V 200mOhm @ 5A, 20V 5.1V @ 1.5mA 14 nC @ 20 V +23V, -5V 350 pF @ 800 V - 109W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-11
IMZC120R040M2HXKSA1 Infineon Technologies

IMZC120R040M2HXKSA1

IMZC120R040M2HXKSA1

Infineon Technologies

240 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 48A (Tc) 15V, 18V 40mOhm @ 18A, 18V 5.1V @ 5.5mA 39 nC @ 18 V +23V, -7V 1310 pF @ 800 V - 218W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
IPT60T022S7XTMA1 Infineon Technologies

IPT60T022S7XTMA1

HIGH POWER_NEW

Infineon Technologies

218 -
Datasheet CoolMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tj) 12V 22mOhm @ 23A, 12V 4.5V @ 1.43mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
IPQC60T022S7XTMA1 Infineon Technologies

IPQC60T022S7XTMA1

HIGH POWER_NEW

Infineon Technologies

750 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 90A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.43mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 416W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
IMW65R033M2HXKSA1 Infineon Technologies

IMW65R033M2HXKSA1

IMW65R033M2HXKSA1

Infineon Technologies

369 -
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 53A (Tc) 15V, 20V 30mOhm @ 27.9A, 20V 5.6V @ 5.7mA 34 nC @ 18 V +23V, -7V 1214 pF @ 400 V - 194W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
IMT40R015M2HXTMA1 Infineon Technologies

IMT40R015M2HXTMA1

SIC-MOS

Infineon Technologies

1,942 -
Datasheet CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 11.7A (Ta), 111A (Tc) 15V, 18V 19.1mOhm @ 27.1A, 18V 5.6V @ 9.7mA 62 nC @ 18 V +23V, -7V 2730 pF @ 200 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
IPDQ60R016CM8XTMA1 Infineon Technologies

IPDQ60R016CM8XTMA1

IPDQ60R016CM8XTMA1

Infineon Technologies

720 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 135A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
IPDQ60R022S7AXTMA1 Infineon Technologies

IPDQ60R022S7AXTMA1

MOSFET

Infineon Technologies

750 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.44mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 416W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.