FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IQDH88N06LM5CGSCATMA1 OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies	7,250	-	RFQ	Datasheet	OptiMOS™ 5	9-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	42A (Ta), 447A (Tc)	4.5V, 10V	0.86mOhm @ 50A, 10V	2.3V @ 163µA	95 nC @ 4.5 V	±20V	14000 pF @ 30 V	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-WHTFN-9-U02
IGLR65R140D2XUMA1 IGLR65R140D2XUMA1 Infineon Technologies	3,809	-	RFQ	Datasheet	CoolGaN™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	13A (Tc)	-	-	1.6V @ 1mA	1.8 nC @ 3 V	-10V	155 pF @ 400 V	-	47W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSON-8-8
IQDH88N06LM5SCATMA1 OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies	2,110	-	RFQ	Datasheet	OptiMOS™ 5	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	42A (Ta), 447A (Tc)	4.5V, 10V	0.86mOhm @ 50A, 10V	2.3V @ 163µA	95 nC @ 4.5 V	±20V	14000 pF @ 30 V	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-WHSON-8-U02
IQFH55N04NM6ATMA1 TRENCH <= 40V Infineon Technologies	5,124	-	RFQ	Datasheet	OptiMOS™ 6	12-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	53A (Ta), 451A (Tc)	6V, 10V	0.55mOhm @ 100A, 10V	2.8V @ 1.05mA	177 nC @ 10 V	±20V	11000 pF @ 20 V	-	3W (Ta), 214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TSON-12-1
IQD009N06NM5CGSCATMA1 OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies	9,291	-	RFQ	Datasheet	OptiMOS™ 5	9-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	42A (Ta), 445A (Tc)	6V, 10V	0.9mOhm @ 50A, 10V	3.3V @ 163µA	150 nC @ 10 V	±20V	12000 pF @ 30 V	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-WHTFN-9-U02
IPP030N10N5AKSA1 MOSFET N-CH 100V 120A TO220-3 Infineon Technologies	5,081	-	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	6V, 10V	3mOhm @ 100A, 10V	3.8V @ 184µA	139 nC @ 10 V	±20V	10300 pF @ 50 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
IQD020N10NM5SCATMA1 OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies	8,430	-	RFQ	Datasheet	OptiMOS™ 5	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	26A (Ta), 276A (Tc)	6V, 10V	2.05mOhm @ 50A, 10V	3.8V @ 159µA	134 nC @ 10 V	±20V	9500 pF @ 50 V	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-WHSON-8-U02
IQD020N10NM5CGSCATMA1 OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies	5,547	-	RFQ	Datasheet	OptiMOS™ 5	9-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	26A (Ta), 276A (Tc)	6V, 10V	2.05mOhm @ 50A, 10V	3.8V @ 159µA	134 nC @ 10 V	±20V	9500 pF @ 50 V	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-WHTFN-9-U02
IQD016N08NM5CGSCATMA1 OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies	8,445	-	RFQ	Datasheet	OptiMOS™ 5	9-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	31A (Ta), 323A (Tc)	6V, 10V	1.57mOhm @ 50A, 10V	3.8V @ 159µA	133 nC @ 10 V	±20V	9200 pF @ 40 V	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-WHTFN-9-U02
IQD016N08NM5SCATMA1 OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies	7,583	-	RFQ	Datasheet	OptiMOS™ 5	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	31A (Ta), 323A (Tc)	6V, 10V	1.57mOhm @ 50A, 10V	3.8V @ 159µA	133 nC @ 10 V	±20V	9200 pF @ 40 V	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-WHSON-8-U02

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FETs, MOSFETs FAQ

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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