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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IMW65R060M2HXKSA1 Infineon Technologies

IMW65R060M2HXKSA1

IMW65R060M2HXKSA1

Infineon Technologies

2,932 -
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 32.8A (Tc) 15V, 20V 55mOhm @ 15.4A, 20V 5.6V @ 3.1mA 19 nC @ 18 V +23V, -7V 669 pF @ 400 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
IPZA60R045P7XKSA1 Infineon Technologies

IPZA60R045P7XKSA1

MOSFET N-CH 650V 61A TO247-4-3

Infineon Technologies

8,983 -
Datasheet CoolMOS™ P7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 61A (Tc) 10V 45mOhm @ 22.5A, 10V 4V @ 1.08mA 90 nC @ 10 V ±20V 3891 pF @ 400 V - 201W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-3
GS61008P-MR Infineon Technologies Canada Inc.

GS61008P-MR

GS61008P-MR

Infineon Technologies Canada Inc.

3,880 -
Datasheet - 5-SMD, No Lead Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 100 V 90A (Tc) 6V 9.5mOhm @ 27A, 6V 2.6V @ 7mA 8 nC @ 6 V +7V, -10V 600 pF @ 50 V - - -55°C ~ 150°C - - Surface Mount -
IMW65R040M2HXKSA1 Infineon Technologies

IMW65R040M2HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

8 -
Datasheet CoolSiC™ Gen 2 TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 46A (Tc) 15V, 20V 36mOhm @ 22.9A, 20V 5.6V @ 4.6mA 28 nC @ 18 V +23V, -7V 997 pF @ 400 V - 172W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
AIMZH120R120M1TXKSA1 Infineon Technologies

AIMZH120R120M1TXKSA1

SIC_DISCRETE

Infineon Technologies

20 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 18V, 20V 150mOhm @ 7A, 20V 5.1V @ 2.2mA 18 nC @ 20 V +23V, -5V 458 pF @ 800 V - 133W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-11
IPT025N15NM6ATMA1 Infineon Technologies

IPT025N15NM6ATMA1

TRENCH >=100V

Infineon Technologies

8,457 -
Datasheet OptiMOS™ 6 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 26A (Ta), 263A (Tc) 8V, 15V 2.4mOhm @ 120A, 15V 4V @ 275µA 137 nC @ 10 V ±20V 9800 pF @ 75 V - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
IPTG025N15NM6ATMA1 Infineon Technologies

IPTG025N15NM6ATMA1

TRENCH >=100V

Infineon Technologies

4,646 -
Datasheet OptiMOS™ 6 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 26A (Ta), 264A (Tc) 8V, 15V 2.4mOhm @ 120A, 15V 4V @ 275µA 137 nC @ 10 V ±20V 9800 pF @ 75 V - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOG-8-1
IPTC025N15NM6ATMA1 Infineon Technologies

IPTC025N15NM6ATMA1

TRENCH >=100V

Infineon Technologies

3,259 -
Datasheet OptiMOS™ 6 16-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 26A (Ta), 264A (Tc) 8V, 15V 2.4mOhm @ 120A, 15V 4V @ 275µA 137 nC @ 10 V ±20V 9800 pF @ 75 V - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-16-2
IMZC120R053M2HXKSA1 Infineon Technologies

IMZC120R053M2HXKSA1

IMZC120R053M2HXKSA1

Infineon Technologies

4,190 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 38A (Tc) 15V, 18V 53mOhm @ 13A, 18V 5.1V @ 4.1mA 30 nC @ 18 V +23V, -7V 1010 pF @ 800 V - 182W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
IGLT65R055D2ATMA1 Infineon Technologies

IGLT65R055D2ATMA1

IGLT65R055D2ATMA1

Infineon Technologies

7,300 -
Datasheet CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 31A (Tc) - - 1.6V @ 2.6mA 4.7 nC @ 3 V -10V 340 pF @ 400 V - 102W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.