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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IQD063N15NM5SCATMA1 Infineon Technologies

IQD063N15NM5SCATMA1

OPTIMOS POWER MOSFETS 25 V - 150

Infineon Technologies

3,039 -
Datasheet OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 14.4A (Ta), 151A (Tc) 8V, 10V 6.32mOhm @ 50A, 10V 4.6V @ 159µA 60 nC @ 10 V ±20V 4700 pF @ 75 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-U02
IPP023N10N5AKSA1 Infineon Technologies

IPP023N10N5AKSA1

MOSFET N-CH 100V 120A TO220-3

Infineon Technologies

4,142 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 270µA 210 nC @ 10 V ±20V 15600 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IQFH47N04NM6ATMA1 Infineon Technologies

IQFH47N04NM6ATMA1

TRENCH <= 40V

Infineon Technologies

8,789 -
Datasheet OptiMOS™ 6 12-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 58A (Ta), 507A (Tc) 6V, 10V 0.47mOhm @ 100A, 10V 2.8V @ 1.05mA 221 nC @ 10 V ±20V 13300 pF @ 20 V - 3W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-12-1
IPP051N15N5AKSA1 Infineon Technologies

IPP051N15N5AKSA1

MOSFET N-CH 150V 120A TO220-3

Infineon Technologies

2,758 -
Datasheet OptiMOS™ 5 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 8V, 10V 5.1mOhm @ 60A, 10V 4.6V @ 264µA 100 nC @ 10 V ±20V 7800 pF @ 75 V - 300mW (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IQFH39N04NM6ATMA1 Infineon Technologies

IQFH39N04NM6ATMA1

TRENCH <= 40V

Infineon Technologies

2,674 -
Datasheet OptiMOS™ 6 12-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 63A (Ta), 600A (Tc) 6V, 10V 0.39mOhm @ 100A, 10V 2.8V @ 1.05mA 273 nC @ 10 V ±20V 16400 pF @ 20 V - 3W (Ta), 273W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-12-1
IGLT65R110D2ATMA1 Infineon Technologies

IGLT65R110D2ATMA1

IGLT65R110D2ATMA1

Infineon Technologies

7,608 -
Datasheet CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 15A (Tc) - - 1.6V @ 1.3mA 2.4 nC @ 3 V -10V 170 pF @ 400 V - 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8
IPP022N12NM6AKSA1 Infineon Technologies

IPP022N12NM6AKSA1

TRENCH >=100V

Infineon Technologies

9,464 -
Datasheet OptiMOS™ 6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 29A (Ta), 203A (Tc) 8V, 10V 2.2mOhm @ 100A, 10V 3.6V @ 275µA 141 nC @ 10 V ±20V 11000 pF @ 60 V - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
AUIRF7799L2TR Infineon Technologies

AUIRF7799L2TR

MOSFET N-CH 250V 375A DIRECTFET

Infineon Technologies

6,719 -
Datasheet HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 375A (Tc) 10V 38mOhm @ 21A, 10V 5V @ 250µA 165 nC @ 10 V ±30V 6714 pF @ 25 V - 4.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IMBG65R040M2HXTMA1 Infineon Technologies

IMBG65R040M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

7,236 -
Datasheet CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 49A (Tc) 15V, 20V 49mOhm @ 22.9A, 18V 5.6V @ 4.6mA 28 nC @ 18 V +23V, -7V 997 pF @ 400 V - 197W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
IPQC60R040S7XTMA1 Infineon Technologies

IPQC60R040S7XTMA1

MOSFET

Infineon Technologies

6,559 -
Datasheet CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V - - 272W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.