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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK5Q60W,S1VQ Toshiba Semiconductor and Storage

TK5Q60W,S1VQ

MOSFET N CH 600V 5.4A IPAK

Toshiba Semiconductor and Storage

75 -
Datasheet DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Ta) 10V 900mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Through Hole IPAK
TK7A60W,S4VX Toshiba Semiconductor and Storage

TK7A60W,S4VX

MOSFET N-CH 600V 7A TO220SIS

Toshiba Semiconductor and Storage

40 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK9A55DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK9A55DA(STA4,Q,M)

MOSFET N-CH 550V 8.5A TO220SIS

Toshiba Semiconductor and Storage

50 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 8.5A (Ta) 10V 860mOhm @ 4.3A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK9A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK9A60D(STA4,Q,M)

MOSFET N-CH 600V 9A TO220SIS

Toshiba Semiconductor and Storage

36 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 830mOhm @ 4.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK12Q60W,S1VQ Toshiba Semiconductor and Storage

TK12Q60W,S1VQ

MOSFET N CH 600V 11.5A IPAK

Toshiba Semiconductor and Storage

59 -
Datasheet DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 100W (Tc) 150°C (TJ) - - Through Hole IPAK
TK12A50W,S5X Toshiba Semiconductor and Storage

TK12A50W,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

44 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
TK7Q60W,S1VQ Toshiba Semiconductor and Storage

TK7Q60W,S1VQ

MOSFET N-CH 600V 7A IPAK

Toshiba Semiconductor and Storage

75 -
Datasheet DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Through Hole IPAK
TK7A65D(STA4,Q,M) Toshiba Semiconductor and Storage

TK7A65D(STA4,Q,M)

MOSFET N-CH 650V 7A TO220SIS

Toshiba Semiconductor and Storage

40 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 980mOhm @ 3.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK7A80W,S4X Toshiba Semiconductor and Storage

TK7A80W,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

50 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
TK6A60W,S4VX Toshiba Semiconductor and Storage

TK6A60W,S4VX

MOSFET N-CH 600V 6.2A TO220SIS

Toshiba Semiconductor and Storage

40 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 750mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.