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FILTERED PRODUCT SELECTION

FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK7E80W,S1X Toshiba Semiconductor and Storage

TK7E80W,S1X

MOSFET N-CH 800V 6.5A TO220

Toshiba Semiconductor and Storage

70 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 110W (Tc) 150°C - - Through Hole TO-220
TK14E65W,S1X Toshiba Semiconductor and Storage

TK14E65W,S1X

MOSFET N-CH 650V 13.7A TO220

Toshiba Semiconductor and Storage

48 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-220
TK20A60W5,S5VX Toshiba Semiconductor and Storage

TK20A60W5,S5VX

MOSFET N-CH 600V 20A TO220SIS

Toshiba Semiconductor and Storage

31 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK4R9E15Q5,S1X Toshiba Semiconductor and Storage

TK4R9E15Q5,S1X

150V UMOS10-HSD TO-220 4.9MOHM

Toshiba Semiconductor and Storage

89 -
Datasheet U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 8V, 10V 4.9mOhm @ 50A, 10V 4.5V @ 2.2mA 96 nC @ 10 V ±20V 7820 pF @ 75 V - 300W (Tc) 175°C - - Through Hole TO-220
TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK18A50D(STA4,Q,M)

MOSFET N-CH 500V 18A TO220SIS

Toshiba Semiconductor and Storage

46 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Ta) 10V 270mOhm @ 9A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK19A45D(STA4,Q,M) Toshiba Semiconductor and Storage

TK19A45D(STA4,Q,M)

MOSFET N-CH 450V 19A TO220SIS

Toshiba Semiconductor and Storage

31 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 19A (Ta) 10V 250mOhm @ 9.5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK080N60Z1,S1F Toshiba Semiconductor and Storage

TK080N60Z1,S1F

600V DTMOS6 TO-247 80MOHM

Toshiba Semiconductor and Storage

30 -
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 80mOhm @ 10.3A, 10V 4V @ 1.17mA 43 nC @ 10 V ±30V 2510 pF @ 300 V - 211W (Tc) 150°C - - Through Hole TO-247
TK12A60W,S4VX Toshiba Semiconductor and Storage

TK12A60W,S4VX

MOSFET N-CH 600V 11.5A TO220SIS

Toshiba Semiconductor and Storage

79 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK28E65W,S1X Toshiba Semiconductor and Storage

TK28E65W,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

50 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-220
TK25E60X5,S1X Toshiba Semiconductor and Storage

TK25E60X5,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage

100 -
Datasheet DTMOSIV-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) - - Through Hole TO-220
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.