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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK3R9E10PL,S1X Toshiba Semiconductor and Storage

TK3R9E10PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

5,271 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 3.9mOhm @ 50A, 10V 2.5V @ 1mA 96 nC @ 10 V ±20V 6320 pF @ 50 V - 230W (Tc) 175°C - - Through Hole TO-220
TK10A80E,S4X Toshiba Semiconductor and Storage

TK10A80E,S4X

MOSFET N-CH 800V 10A TO220SIS

Toshiba Semiconductor and Storage

9,697 -
Datasheet π-MOSVIII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Ta) 10V 1Ohm @ 5A, 10V 4V @ 1mA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK7J90E,S1E Toshiba Semiconductor and Storage

TK7J90E,S1E

MOSFET N-CH 900V 7A TO3P

Toshiba Semiconductor and Storage

22 -
Datasheet π-MOSVIII TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Ta) 10V 2Ohm @ 3.5A, 10V 4V @ 700µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 200W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
TK100A06N1,S4X Toshiba Semiconductor and Storage

TK100A06N1,S4X

MOSFET N-CH 60V 100A TO220SIS

Toshiba Semiconductor and Storage

6,673 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 2.7mOhm @ 50A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10500 pF @ 30 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK72A12N1,S4X Toshiba Semiconductor and Storage

TK72A12N1,S4X

MOSFET N-CH 120V 72A TO220SIS

Toshiba Semiconductor and Storage

5,341 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 120 V 72A (Tc) 10V 4.5mOhm @ 36A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8100 pF @ 60 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TJ200F04M3L,LXHQ Toshiba Semiconductor and Storage

TJ200F04M3L,LXHQ

MOSFET P-CH 40V 200A TO220SM

Toshiba Semiconductor and Storage

7,070 -
Datasheet U-MOSVI TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 6V, 10V 1.8mOhm @ 100A, 10V 3V @ 1mA 460 nC @ 10 V +10V, -20V 1280 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
TK20E60W5,S1VX Toshiba Semiconductor and Storage

TK20E60W5,S1VX

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

17 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C - - Through Hole TO-220
TK100A10N1,S4X Toshiba Semiconductor and Storage

TK100A10N1,S4X

MOSFET N-CH 100V 100A TO220SIS

Toshiba Semiconductor and Storage

17 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 3.8mOhm @ 50A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 8800 pF @ 50 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK39N60W,S1VF Toshiba Semiconductor and Storage

TK39N60W,S1VF

MOSFET N CH 600V 38.8A TO247

Toshiba Semiconductor and Storage

20 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-247
TK065N65Z,S1F Toshiba Semiconductor and Storage

TK065N65Z,S1F

MOSFET N-CH 650V 38A TO247

Toshiba Semiconductor and Storage

19 -
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Ta) 10V 65mOhm @ 19A, 10V 4V @ 1.69mA 62 nC @ 10 V ±30V 3650 pF @ 300 V - 270W (Tc) 150°C - - Through Hole TO-247
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.