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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK110E10PL,S1X Toshiba Semiconductor and Storage

TK110E10PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

5,429 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 10.7mOhm @ 21A, 10V 2.5V @ 300µA 33 nC @ 10 V ±20V 2040 pF @ 50 V - 87W (Tc) 175°C - - Through Hole TO-220
TK22A10N1,S4X Toshiba Semiconductor and Storage

TK22A10N1,S4X

MOSFET N-CH 100V 22A TO220SIS

Toshiba Semiconductor and Storage

1 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 10V 13.8mOhm @ 11A, 10V 4V @ 300µA 28 nC @ 10 V ±20V 1800 pF @ 50 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK42A12N1,S4X Toshiba Semiconductor and Storage

TK42A12N1,S4X

MOSFET N-CH 120V 42A TO220SIS

Toshiba Semiconductor and Storage

9,325 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 120 V 42A (Tc) 10V 9.4mOhm @ 21A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3100 pF @ 60 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK11A65W,S5X Toshiba Semiconductor and Storage

TK11A65W,S5X

MOSFET N-CH 650V 11.1A TO220SIS

Toshiba Semiconductor and Storage

6 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11.1A (Ta) 10V 390mOhm @ 5.5A, 10V 3.5V @ 450µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK32E12N1,S1X Toshiba Semiconductor and Storage

TK32E12N1,S1X

MOSFET N CH 120V 60A TO-220

Toshiba Semiconductor and Storage

5,659 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 60A (Tc) 10V 13.8mOhm @ 16A, 10V 4V @ 500µA 34 nC @ 10 V ±20V 2000 pF @ 60 V - 98W (Tc) 150°C (TJ) - - Through Hole TO-220
TK5R3E08QM,S1X Toshiba Semiconductor and Storage

TK5R3E08QM,S1X

UMOS10 TO-220AB 80V 5.3MOHM

Toshiba Semiconductor and Storage

6 -
Datasheet U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 5.3mOhm @ 50A, 10V 3.5V @ 700µA 55 nC @ 10 V ±20V 3980 pF @ 40 V - 150W (Tc) 175°C - - Through Hole TO-220
TK3R3A06PL,S4X Toshiba Semiconductor and Storage

TK3R3A06PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

6,374 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 3.3mOhm @ 40A, 10V 2.5V @ 700µA 71 nC @ 10 V ±20V 5000 pF @ 30 V - 42W (Tc) 175°C - - Through Hole TO-220SIS
TK6A65D(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A65D(STA4,Q,M)

MOSFET N-CH 650V 6A TO220SIS

Toshiba Semiconductor and Storage

20 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Ta) 10V 1.11Ohm @ 3A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK290A65Y,S4X Toshiba Semiconductor and Storage

TK290A65Y,S4X

MOSFET N-CH 650V 11.5A TO220SIS

Toshiba Semiconductor and Storage

3,566 -
Datasheet DTMOSV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11.5A (Tc) 10V 290mOhm @ 5.8A, 10V 4V @ 450µA 25 nC @ 10 V ±30V 730 pF @ 300 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK9A90E,S4X Toshiba Semiconductor and Storage

TK9A90E,S4X

MOSFET N-CH 900V 9A TO220SIS

Toshiba Semiconductor and Storage

24 -
Datasheet π-MOSVIII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 9A (Ta) 10V 1.3Ohm @ 4.5A, 10V 4V @ 900µA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.